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FQB9N15TM

Description
MOSFET N-CH 150V 9A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size739KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQB9N15TM Overview

MOSFET N-CH 150V 9A D2PAK

FQB9N15TM Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)150V
Current - Continuous Drain (Id) at 25°C9A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs400 milliohms @ 4.5A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)13nC @ 10V
Vgs (maximum value)±25V
Input capacitance (Ciss) at different Vds (maximum value)410pF @ 25V
FET function-
Power dissipation (maximum)3.75W(Ta),75W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD²PAK(TO-263AB)
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
  

  




 



     

       



   

    

   

 

  

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FQB9N15TM Related Products

FQB9N15TM FQI9N15TU
Description MOSFET N-CH 150V 9A D2PAK MOSFET N-CH 150V 9A I2PAK
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 150V 150V
Current - Continuous Drain (Id) at 25°C 9A(Tc) 9A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V
Rds On (maximum value) when different Id, Vgs 400 milliohms @ 4.5A, 10V 400 milliohms @ 4.5A, 10V
Vgs (th) (maximum value) when different Id 4V @ 250µA 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 13nC @ 10V 13nC @ 10V
Vgs (maximum value) ±25V ±25V
Input capacitance (Ciss) at different Vds (maximum value) 410pF @ 25V 410pF @ 25V
Power dissipation (maximum) 3.75W(Ta),75W(Tc) 3.75W(Ta),75W(Tc)
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount Through hole
Supplier device packaging D²PAK(TO-263AB) I2PAK(TO-262)
Package/casing TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-262-3, long lead, I²Pak, TO-262AA

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