
MOSFET N-CH 150V 9A D2PAK
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) at 25°C | 9A(Tc) |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V |
| Rds On (maximum value) when different Id, Vgs | 400 milliohms @ 4.5A, 10V |
| Vgs (th) (maximum value) when different Id | 4V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum value) | 13nC @ 10V |
| Vgs (maximum value) | ±25V |
| Input capacitance (Ciss) at different Vds (maximum value) | 410pF @ 25V |
| FET function | - |
| Power dissipation (maximum) | 3.75W(Ta),75W(Tc) |
| Operating temperature | -55°C ~ 175°C(TJ) |
| Installation type | surface mount |
| Supplier device packaging | D²PAK(TO-263AB) |
| Package/casing | TO-263-3, D²Pak (2-lead + tab), TO-263AB |
"
!
!
$
!
1
)' 2
)32
"
+
+
>
>
!!$
*
@
@
( " B
@
( "
| FQB9N15TM | FQI9N15TU | |
|---|---|---|
| Description | MOSFET N-CH 150V 9A D2PAK | MOSFET N-CH 150V 9A I2PAK |
| FET type | N channel | N channel |
| technology | MOSFET (metal oxide) | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 150V | 150V |
| Current - Continuous Drain (Id) at 25°C | 9A(Tc) | 9A(Tc) |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V | 10V |
| Rds On (maximum value) when different Id, Vgs | 400 milliohms @ 4.5A, 10V | 400 milliohms @ 4.5A, 10V |
| Vgs (th) (maximum value) when different Id | 4V @ 250µA | 4V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum value) | 13nC @ 10V | 13nC @ 10V |
| Vgs (maximum value) | ±25V | ±25V |
| Input capacitance (Ciss) at different Vds (maximum value) | 410pF @ 25V | 410pF @ 25V |
| Power dissipation (maximum) | 3.75W(Ta),75W(Tc) | 3.75W(Ta),75W(Tc) |
| Operating temperature | -55°C ~ 175°C(TJ) | -55°C ~ 175°C(TJ) |
| Installation type | surface mount | Through hole |
| Supplier device packaging | D²PAK(TO-263AB) | I2PAK(TO-262) |
| Package/casing | TO-263-3, D²Pak (2-lead + tab), TO-263AB | TO-262-3, long lead, I²Pak, TO-262AA |