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FQPF4P40

Description
MOSFET P-CH 400V 2.4A TO-220F
Categorysemiconductor    Discrete semiconductor   
File Size635KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQPF4P40 Overview

MOSFET P-CH 400V 2.4A TO-220F

FQPF4P40 Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)400V
Current - Continuous Drain (Id) at 25°C2.4A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs3.1 ohms @ 1.2A, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)23nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)680pF @ 25V
FET function-
Power dissipation (maximum)39W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220F
Package/casingTO-220-3 whole package
FQPF4P40
August 2000
QFET
FQPF4P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
TM
Features
-2.4A, -400V, R
DS(on)
= 3.1Ω @V
GS
= -10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
S
!
G
!
▶ ▲
GD S
TO-220F
FQPF Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQPF4P40
-400
-2.4
-1.52
-9.6
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
260
-2.4
3.9
-4.5
39
0.31
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
3.2
62.5
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, August 2000
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