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ISL6612AEIBZ-T

Description
IC MOSFET DRVR SYNC BUCK 8EPSOIC
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size591KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Related ProductsFound20parts with similar functions to ISL6612AEIBZ-T
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ISL6612AEIBZ-T Overview

IC MOSFET DRVR SYNC BUCK 8EPSOIC

ISL6612AEIBZ-T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSOIC
package instructionROHS COMPLIANT, PLASTIC, SOIC-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
high side driverYES
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.89 mm
Humidity sensitivity level3
Number of functions1
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeHLSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE
Peak Reflow Temperature (Celsius)260
power supply5/12,12 V
Certification statusNot Qualified
Maximum seat height1.68 mm
Maximum supply voltage13.2 V
Minimum supply voltage10.8 V
Nominal supply voltage12 V
Supply voltage 1-max13.2 V
Mains voltage 1-minute5 V
Supply voltage1-Nom12 V
surface mountYES
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width3.9 mm
Base Number Matches1
DATASHEET
ISL6612A, ISL6613A
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
The ISL6612A and ISL6613A are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612A drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613A drives both upper and lower gates over
a range of 5V to 12V. This drive-voltage provides the
flexibility necessary to optimize applications involving
trade-offs between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial startup.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
FN9159
Rev 7.00
May 1, 2012
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications with
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
FN9159 Rev 7.00
May 1, 2012
Page 1 of 12

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