HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Features
Noise Figure: 3.5 dB
P1dB: +12 dBm
Gain: 22 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.80 x 0.73 x 0.1 mm
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
This HMC-ALH310 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
General Description
The HMC-ALH310 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
37 and 42 GHz. The HMC-ALH310 features 22 dB of
small signal gain, 3.5 dB of noise figure and an output
power of +12 dBm at 1dB compression from a +2.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifi cations, T
A
= +25° C, Vdd = 2.5V, Idd = 52 mA*
Parameter
Frequency Range
Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd
total
= 52 mA
20
Min.
Typ.
37 - 42
22
3.5
4
8
12
52
4.5
Max.
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 138
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Linear Gain vs. Frequency
26
24
Noise Figure vs. Frequency
5
4
NOISE FIGURE (dB)
1
LOW NOISE AMPLIFIERS - CHIP
1 - 139
22
GAIN (dB)
20
18
16
14
12
10
35
36
37
38
39
40
41
42
43
44
FREQUENCY (GHz)
3
2
1
0
35
36
37
38
39
40
41
42
43
44
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
35
36
37
38
39
40
41
42
43
44
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
35
36
37
38
39
40
41
42
43
44
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5 Vdc
-1 to +0.3 Vdc
-5 dBm
137.8 °C/W
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-5 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 140
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Pad Descriptions
Pad Number
1
2
Function
RFIN
RFOUT
Description
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
required external components.
Interface Schematic
1
LOW NOISE AMPLIFIERS - CHIP
1 - 141
3
Vdd
4
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Assembly Diagram
1 - 142
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
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