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MRF275G

Description
FET RF 2CH 65V 500MHZ 375-04
Categorysemiconductor    Discrete semiconductor   
File Size1MB,20 Pages
ManufacturerM/A-COM Tech(MACOM)
Websitehttp://www.macom.com
Environmental Compliance
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FET RF 2CH 65V 500MHZ 375-04

MRF275G Parametric

Parameter NameAttribute value
Transistor type2 N channel (dual) common source
frequency500MHz
Gain11.2dB
Voltage - Test28V
Rated current26A
Noise Figure-
Current - Test100mA
Power - output150W
Voltage - Rated65V
Package/casing375-04
Supplier device packaging375-04, Type 2
MRF275G
The RF MOSFET Line
150W, 500MHz, 28V
Designed primarily for wideband large–signal output and
driver stages from 100 – 500 MHz.
N-Channel enhancement mode
Rev. V1
Product Image
Guaranteed performance @ 500 MHz, 28 Vdc
Output power — 150 W
Power gain — 10 dB (min.)
Efficiency — 50% (min.)
100% tested for load mismatch at all phase angles
with VSWR 30:1
Overall lower capacitance @ 28 V
Ciss — 135 pF
Coss — 140 pF
Crss — 17 pF
Simplified AVC, ALC and modulation
CASE 375–04, STYLE 2
Typical data for power amplifiers in industrial and
commercial applications:
Typical performance @ 400 MHz, 28 Vdc
Output power — 150 W
Power gain — 12.5 dB
Efficiency — 60%
Typical performance @ 225 MHz, 28 Vdc
Output power — 200 W
Power gain — 15 dB
Efficiency — 65%
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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