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SI4974DY-T1-E3

Description
MOSFET 2N-CH 30V 6A 8-SOIC
CategoryDiscrete semiconductor    The transistor   
File Size115KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI4974DY-T1-E3 Overview

MOSFET 2N-CH 30V 6A 8-SOIC

SI4974DY-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)4.4 A
Maximum drain-source on-resistance0.048 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Si4974DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.019 at V
GS
= 10 V
0.026 at V
GS
= 4.5 V
0.035 at V
GS
= 10 V
0.048 at V
GS
= 4.5 V
I
D
(A)
8.0
6.9
6.0
5.0
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• 100 % R
g
Tested
APPLICATIONS
• Logic DC/DC
- Notebook PC
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4974DY-T1-E3 (Lead (Pb)-free)
Si4974DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
2
1.3
1.8
15
11
1.1
0.7
2
1.3
- 55 to 150
8.0
6.5
40
1.0
1.8
7
2.45
1.1
0.7
mJ
W
°C
6.0
4.7
10 s
Steady State
30
± 20
6.0
4.8
30
1.0
4.4
3.5
A
10 s
Channel-2
Steady State
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
50
90
30
Max.
62.5
110
40
52
91
32
Channel-2
Typ.
Max.
62.5
110
40
°C/W
Unit
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
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