EEWORLDEEWORLDEEWORLD

Part Number

Search

M29W800DT70N6E

Description
IC FLASH 8M PARALLEL 48TSOP
Categorystorage    storage   
File Size1MB,52 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

M29W800DT70N6E Online Shopping

Suppliers Part Number Price MOQ In stock  
M29W800DT70N6E - - View Buy Now

M29W800DT70N6E Overview

IC FLASH 8M PARALLEL 48TSOP

M29W800DT70N6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP
package instructionTSOP1, TSSOP48,.8,20
Contacts48
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time70 ns
Other featuresTOP BOOT BLOCK
Spare memory width8
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,15
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width12 mm
M29W800DT
M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
3 V supply flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for program, erase
and read
Access times: 45, 70, 90 ns
Programming time
– 10
μs
per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during
erase suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
TFBGA48 (ZE)
6 x 8 mm
TSOP48 (N)
12 x 20 mm
SO44 (M)
FBGA
April 2009
Rev 11
1/52
www.numonyx.com
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1951  940  1194  1829  2720  40  19  25  37  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号