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MT8HTF12864HDY-667E1

Description
MODULE DDR2 SDRAM 1GB 200SODIMM
Categorystorage    storage   
File Size365KB,19 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT8HTF12864HDY-667E1 Overview

MODULE DDR2 SDRAM 1GB 200SODIMM

MT8HTF12864HDY-667E1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Reach Compliance Codeunknown
Maximum access time0.45 ns
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
JESD-30 codeR-PDMA-N200
memory density8589934592 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of terminals200
word count134217728 words
character code128000000
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX64
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIMM
Encapsulate equivalent codeDIMM200,24
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum standby current0.056 A
Maximum slew rate2.16 mA
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.6 mm
Terminal locationDUAL
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT8HTF3264HDY – 256MB
MT8HTF6464HDY – 512MB
MT8HTF12864HDY – 1GB
Features
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB
(128 Meg x 64)
V
DD
= 1.8V
V
DDSPD
= 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent opera-
tion
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Module height: 30mm (1.18in)
Options
Operating temperature
Commercial (0°C
T
A
+70°C)
Industrial (–40°C
T
A
+85°C)
1
Package
200-pin DIMM (lead-free)
Frequency/CL2
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-553)
3
5.0ns @ CL = 3 (DDR2-400)
3
Notes:
Marking
D
T
Y
-80E
-800
-667
-53E
-40E
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 6
800
800
CL = 5
800
667
667
CL = 4
533
533
553
553
400
CL = 3
400
400
400
400
400
t
RCD
t
RP
t
RC
(ns)
12.5
15
15
15
15
(ns)
12.5
15
15
15
15
(ns)
55
55
55
55
55
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2006 Micron Technology, Inc. All rights reserved.
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