PHOTODIODE 5 mm
2
FEATURES
•
•
•
•
•
UVG5
Circular active area
Ideal for 193-400 nm detection
100% internal QE
No cap for maximum responsivity
Temporary cap taped on for
shipping purposes
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity,
R
Dark Current, Idr
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
TEST CONDITIONS
Ø 2.5 mm
@ 254 nm
V
R
= 6 V
I
R
= 1 µA
V
R
= 0 V
V
R
= 0 V
1
25
50
2
2
0.09
MIN
TYP
5
0.115
1
MAX
UNITS
mm
2
A/W
nA
Volts
nF
µsec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Storage Temperature Range
Maximum Junction Temperature
Lead Soldering Temperature
1
1
-20° TO 80°C
80°C
240°C
0.0625" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision September 6, 2013
PHOTODIODE 5 mm
2
RESPONSIVITY
UVG5
0.6
Responsivity (A/W)
0.5
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision September 6, 2013