RS3A - RS3M
Taiwan Semiconductor
3A, 50V - 1000V Surface Mount Fast Recovery Rectifier
FEATURES
●
●
●
●
●
Glass passivated chip junction
Ideal for automated placement
Fast switching for high efficiency
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
3
50 - 1000
100
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
Configuration
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K RS3M UNIT
RS3A RS3B RS3D RS3G RS3J RS3K RS3M
50
35
50
100
70
100
200
140
200
400
280
400
3
100
- 55 to +150
- 55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C
°C
1
Version:J1708
RS3A - RS3M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
15
50
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 3A, T
J
= 25°C
(2)
SYMBOL
V
F
I
R
TYP.
-
-
-
-
MAX.
1.3
10
250
150
250
500
UNIT
V
µA
µA
ns
ns
ns
Reverse current @ rated V
R
per diode
T
J
= 25°C
T
J
= 125°C
Reverse recovery time
RS3A
RS3B
RS3D
RS3G
RS3J
RS3K
RS3M
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
-
-
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:J1708
RS3A - RS3M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.5
AVERAGE FORWARD CURRENT (A)
100
Fig.2 Typical Junction Capacitance
3
CAPACITANCE (pF)
RESISTIVE OR
INDUCTIVE LOAD
10
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
f=1.0MHz
Vsig=50mVp-p
1
10
REVERSE VOLTAGE (V)
100
LEAD TEMPERATURE (
°
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
100 10
Fig.4 Typical Forward Characteristics
Pulse width=300μs
1% duty cycle
10
T
J
=125
o
C
1
10
0.1
UF1DLW
T
J
=125
o
C
T
J
=125°C
T
J
=25°C
(A)
T
J
=25
o
C
1
T
J
=75
o
C
1
0.01
T
J
=25
o
C
0.1
0
20
40
60
80
100
120
140
0.001
0.1
0.4
0.3
0.4
0.6
0.5
0.8
1
T
J
=40
o
C
0.6
0.7
1.2
0.8
1.4
Pulse width
0.9
1.6
1
1.8
1.1
2
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:J1708
RS3A - RS3M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
150
8.3ms Single Half Sine Wave
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:J1708
Embedded System
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