Specifications are subject to change without notice.
Revised: 09/15/17
Thyristors
Surface Mount – 50 - 800V > 2N6400
Maximum Ratings †
(T
J
= 25°C unless otherwise noted)
Rating
Part Number
Symbol
Value
Unit
2N6400
2N6401
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6402
2N6403
2N6404
2N6405
On-State RMS Current
(180° Conduction Angles; T
C
= 100°C)
Average On-State RMS Current
(180° Conduction Angles; T
C
= 100°C)
Peak Non−Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 90°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, T
C
= 100°C)
Forward Average Gate Power (t = 8.3 ms, T
C
= 100°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, T
C
= 100°C)
Operating Junction Temperature Range
Storage Temperature Range
†Indicates JEDEC Registered Data
50
100
V
DRM,
V
RRM
200
400
600
800
I
T
16
A
V
(RMS)
I
T
(AV)
10
A
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
160
145
20
0.5
2.0
-40 to +125
-40 to +125
A
A
2
s
W
W
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Maximum Ratings †
(T
J
= 25°C unless otherwise noted)
Rating
Thermal Resistance, Junction-to-Case
Maximum Lead Temperature for Soldering Purposes, 1/8” from
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