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V8P20-M3/87A

Description
DIODE SCHOTTKY 200V 2.2A TO277A
Categorysemiconductor    Discrete semiconductor   
File Size103KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

V8P20-M3/87A Overview

DIODE SCHOTTKY 200V 2.2A TO277A

V8P20-M3/87A Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)2.2A
Voltage at different If - Forward (Vf1.4V @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current250µA @ 200V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-277,3-PowerDFN
Supplier device packagingTO-277A(SMPC)
Operating Temperature - Junction-40°C ~ 150°C
V8P20
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.60 V at I
F
= 4 A
TMBS® eSMP®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
2
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMPC
(TO-277A)
K
Cathode
Anode 1
Anode 2
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 8.0 A
T
J
max.
Package
Circuit configuration
8.0 A
200 V
150 A
0.68 V
150 °C
SMPC (TO-277A)
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended copper pad area
V
RRM
I
F (1)
I
F
(2)
SYMBOL
V8P20
V820
200
8.0
2.2
150
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
I
FSM
dV/dt
T
J
, T
STG
Revision: 27-Jun-2018
Document Number: 89315
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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