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82CNQ030APBF

Description
80 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size172KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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82CNQ030APBF Overview

80 A, 30 V, SILICON, RECTIFIER DIODE

82CNQ030APBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T3
Contacts3
Manufacturer packaging codeD61-8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current5100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current80 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin PD-21006 01/05
82CNQ030APbF
82CNQ030ASMPbF
SCHOTTKY RECTIFIER
New GenIII D-61 Package
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 40 Apk, T
J
= 125°C
(per leg)
range
80 Amp
Description/ Features
Units
A
V
A
V
The center tap Schottky rectifier module has been optimized
for very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
150 °C T
J
operation
Dual center tap module
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
80
30
5100
0.37
- 55 to 150
°C
New fully transfer-mold low profile, small
footprint, high current package
Through-hole versions are currently available for use in
Lead-Free applications ("PbF" suffix)
Case Styles
82CNQ030APbF
82CNQ030ASMPbF
D61-8
www.irf.com
D61-8-SM
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