Bulletin PD-20888 rev. A 10/06
8ETL06PbF
8ETL06FPPbF
Ultra-low V
F
Hyperfast Rectifier for Discontinuous Mode PFC
Features
•
•
•
•
•
•
•
Benchmark Ultra-low Forward Voltage Drop
Hyperfast Recovery Time
Low Leakage Current
175°C Operating Junction Temperature
Fully Isolated package (V
INS
= 2500 V
RMS
)
UL E78996 approved
Lead-Free ("PbF" suffix)
V
F
= 0.96V typ.
I
F(AV)
= 8Amp
V
R
= 600V
Description
State of the art, ultra-low V
F
, soft-switching Hyperfast Rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimised conduction loss, optimized stored charge and low recovery current minimize the switching losses
and reduce over dissipation in the switching element and snubbers.
The device is also intended for use as a free wheeling diode in power supplies and other power switching
applications.
Applications
AC-DC SMPS 70W-400W
e.g. Laptop & Printer AC Adaptors, Desktop PC, TV & Monitor, Games units and DVD AC-DC power supplies.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 160°C
@ T
C
= 142°C (FULLPACK)
Non Repetitive Peak Surge Current @ T
J
= 25°C
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
175
16
- 65 to 175
°C
Max
600
8
Units
V
A
Case Styles
8ETL06PbF
8ETL06FPPbF
Base
Cathode
2
1
3
Cathode
1
3
Anode
Cathode
Anode
TO-220AC
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TO-220 FULLPACK
1
8ETL06PbF, 8ETL06FPPbF
Bulletin
PD-20888 rev. A 10/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
600
-
-
-
-
V
V
V
μA
μA
pF
nH
I
R
= 100μA
I
F
= 8A, T
J
= 25°C
I
F
= 8A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 600V
Measured lead to lead 5mm from package
0.96 1.05
0.81 0.86
0.05
20
17
8.0
5
100
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
body
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
60
150
170
250
15
20
1.3
2.6
100
250
-
-
-
-
-
-
μC
A
ns
I
F
= 1A, di
F
/dt = 100A/μs, V
R
= 30V
I
F
= 8A, di
F
/dt = 100A/μs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 8A
di
F
/dt = 200A/μs
V
R
= 390V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Per Leg
Min
-
- 65
-
-
-
-
-
-
Typ
-
-
1.4
3.4
-
0.5
2.0
0.07
-
-
Max
175
175
2
4.3
70
-
-
-
12
10
Units
°C
°C/W
Fullpack (Per Leg)
R
thJA
R
thCS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Per Leg
g
(oz)
Kg-cm
lbf.in
Mounting Torque
6.0
5.0
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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8ETL06PbF, 8ETL06FPPbF
Bulletin
PD-20888 rev. A 10/06
100
100
10
1
0.1
0.01
Tj = 175˚C
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
10
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
Reverse Current - I
R
(μA)
0.001
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
100
1
Junction Capacitance - C
T
(pF)
T J = 25˚C
0.1
0.4
10
0.8
1.2
1.6
2
0
100
200
300
400
500
600
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t1
t2
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
0.0001
1
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3
8ETL06PbF, 8ETL06FPPbF
Bulletin
PD-20888 rev. A 10/06
10
(°C/W)
Thermal Impedance Z
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
thJC
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
175
170
165
160
155
see note (3)
160
DC
140
120
DC
Square wave (D = 0.50)
Rated Vr applied
Square wave (D = 0.50)
Rated Vr applied
100
see note (3)
80
150
0
2
4
6
8
10
12
14
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
0
2
4
6
8
10 12 14
Average Forward Current - I
F
(AV)
(A)
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
12
Average Power Loss ( Watts )
10
8
6
4
2
0
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
Fig. 8 - Forward Power Loss Characteristics
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss =
I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
RMS Limit
4
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8ETL06PbF, 8ETL06FPPbF
Bulletin
PD-20888 rev. A 10/06
450
400
350
300
Qrr ( nC )
trr ( ns )
IF = 16 A
IF = 8 A
5000
4500
4000
3500
3000
2500
2000
1500
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
IF = 16 A
IF = 8 A
250
200
150
100
50
0
100
di
F
/dt (A/μs )
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
1000
500
100
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
1000
1000
di
F
/dt (A/μs )
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
di
F
/dt
D
G
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
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