PBSS3515E
15 V, 0.5 A PNP low V
CEsat
(BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
NPN complement: PBSS2515E.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
s
s
s
s
s
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
1.4 Quick reference data
Table 1:
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
single pulse;
t
p
≤
1 ms
I
C
=
−500
mA;
I
B
=
−50
mA
[1]
Symbol Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
300
Max
−15
−0.5
−1
500
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
3
1
2
sym013
Simplified outline
Symbol
3
3. Ordering information
Table 3:
Ordering information
Package
Name
PBSS3515E
SC-75
Description
plastic surface mounted package; 3 leads
Version
SOT416
Type number
4. Marking
Table 4:
Marking codes
Marking code
1R
Type number
PBSS3515E
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
[2]
9397 750 14878
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
−65
−65
Max
−15
−15
−6
−0.5
−1
−100
150
250
150
+150
+150
Unit
V
V
V
A
A
mA
mW
mW
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
2 of 11
Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low V
CEsat
(BISS) transistor
300
P
tot
(mW)
(1)
006aaa412
200
(2)
100
0
0
40
80
120
160
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
-
-
Max
833
500
Unit
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
9397 750 14878
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
3 of 11
Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
0.75
006aaa413
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
=
−15
V; I
E
= 0 A
V
CB
=
−15
V; I
E
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; I
C
=
−10
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−200
mA; I
B
=
−10
mA
I
C
=
−500
mA; I
B
=
−50
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
90
-
-
-
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
300
-
-
280
-
Max
−100
−50
−100
-
-
-
−25
−150
−250
500
−1.1
−0.9
-
10
Unit
nA
µA
nA
I
EBO
h
FE
mV
mV
mV
mΩ
V
V
MHz
pF
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; I
B
=
−50
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−100
mA;
f = 100 MHz
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
[1]
[1]
[1]
9397 750 14878
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
4 of 11
Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low V
CEsat
(BISS) transistor
600
(1)
006aaa372
−1100
V
BE
(mV)
−900
(1)
006aaa373
h
FE
400
(2)
−700
(2)
−500
200
(3)
(3)
−300
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−100
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
=
−2
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
V
CE
=
−2
V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
Fig 3. DC current gain as a function of collector
current; typical values
−1
V
CEsat
(mV)
−10
−1
006aaa374
Fig 4. Base-emitter voltage as a function of collector
current; typical values
−1
V
CEsat
(mV)
−10
−1
(1)
(2)
006aaa375
(1)
(2)
(3)
−10
−2
−10
−2
(3)
−10
−3
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−10
−3
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14878
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
5 of 11
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