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BUK7277-55A,118

Description
MOSFET N-CH 55V 18A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size724KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK7277-55A,118 Overview

MOSFET N-CH 55V 18A DPAK

BUK7277-55A,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeDPAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT428
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)36 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)73 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7277-55A
12 June 2014
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2; Fig. 3
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12; Fig. 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 6 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
36
mJ
-
65
77
Min
-
-
-
Typ
-
-
-
Max
55
18
51
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
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