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BSS84AK-BR

Description
MOSFET P-CH 50V 180MA TO236AB
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BSS84AK-BR Overview

MOSFET P-CH 50V 180MA TO236AB

BSS84AK-BR Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)50V
Current - Continuous Drain (Id) at 25°C180mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)5V,10V
Rds On (maximum value) when different Id, Vgs7.5 ohms @ 100mA, 10V
Vgs (th) (maximum value) when different Id2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value).35nC @ 5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)36pF @ 25V
FET function-
Power dissipation (maximum)1.14W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingTO-236AB
Package/casingTO-236-3,SC-59,SOT-23-3
BSS84AK
50 V, 180 mA P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -100 mA;
T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
4.5
Max Unit
-50
20
V
V
-180 mA
7.5
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.

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Description MOSFET P-CH 50V 180MA TO236AB Drain-source voltage (Vdss): 50V Continuous drain current (Id) (at 25°C): 180mA Gate-source threshold voltage: 2.1V @ 250uA Drain-source on-resistance: 7.5Ω @ 100mA, 10V Maximum power dissipation ( Ta=25°C): 350mW Type: P channel P channel, 50V, 180mA
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