UNISONIC TECHNOLOGIES CO., LTD
6N60
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 6N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
Power MOSFET
FEATURES
* R
DS(ON)
= 1.5Ω @V
GS
= 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 6N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
6N60-x-TA3-T
6N60L-x-TA3-T
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2007 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-117.A
6N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 1)
6N60-A
6N60-B
SYMBOL
V
DSS
V
GSS
I
AR
Power MOSFET
RATINGS
600
650
±30
UNIT
V
V
V
A
A
A
A
mJ
mJ
W
℃
℃
℃
6.2
T
C
= 25°C
6.2
Continuous Drain Current
I
D
T
C
= 100°C
3.9
Pulsed Drain Current (Note 1)
I
DM
24.8
Single Pulsed (Note 2)
E
AS
440
Avalanche Energy
Repetitive (Note 1)
E
AR
13
Power Dissipation
P
D
62.5
Junction Temperature
T
J
+150
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θ
JA
θ
JC
RATING
62
2
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
6N60-A
6N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
0.53
2.0
4.0
1.5
770 1000
95 120
10
13
20
70
40
45
20
4.9
9.4
50
150
90
100
25
MIN TYP MAX UNIT
600
650
10
100
-100
V
V
µA
nA
nA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
△
BV
DSS
/△T
J
I
D
= 250 µA, Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3.1A
V
DS
=25V, V
GS
=0V, f=1.0 MHz
V
DD
=300V, I
D
=6.2A, R
G
=25Ω
(Note 4, 5)
V
DS
=480V, I
D
=6.2A, V
GS
=10 V
(Note 4, 5)
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QW-R502-117.A
6N60
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 6.2 A,
dI
F
/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating : Pulse width limited by T
J
2. L = 16.8mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
6.2A, di/dt
≤200A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4
6.2
24.8
290
2.35
V
A
A
ns
µC
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QW-R502-117.A
6N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 7
QW-R502-117.A
6N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-117.A
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