2016-01-04
Silicon NPN Phototransistor
Version 1.3
BPX 38
Features:
•
Spectral range of sensitivity:
(typ) 450 ... 1120 nm
•
Package:
Metal Can (TO-18), hermetically sealed
•
Special:
Base connection
•
Suitable up to 125 °C
•
High linearity
•
Available in groups
Applications
•
Photointerrupters
•
Industrial electronics
•
For control and drive circuits
Ordering Information
Type:
Photocurrent
I
PCE
[µA]
λ = 950 nm, E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
BPX 38
BPX 38-2/3
BPX 38-3
BPX 38-4
Note:
Ordering Code
≥ 200
200 ... 630
320 ... 630
500 ... 1000
Only one bin within one packing unit (variation less than 2:1)
Q62702P0015
Q62702P3578
Q62702P0015S003
Q62702P0015S004
2016-01-04
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Collector-emitter voltage
Collector current
Collector surge current
(τ < 10 µs)
Emitter-base voltage
Total Power dissipation
Thermal resistance
Characteristics
(T
A
= 25 °C)
Parameter
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of chip area
Half angle
Photocurrent of collector-base photodiode
(λ = 950 nm, E
e
= 0.5 mW/cm
2
, V
CB
= 5 V)
Photocurrent of collector-base photodiode
(E
V
= 1000 lx, Std. Light A, V
CB
= 5 V)
Capacitance
(V
CE
= 0 V, f = 1 MHz, E = 0)
Capacitance
(V
CB
= 0 V, f = 1 MHz, E = 0)
Capacitance
(V
EB
= 0 V, f = 1 MHz, E = 0)
Dark current
(V
CE
= 25 V, E = 0)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
S max
λ
10%
A
LxW
ϕ
I
PCB
I
PCB
C
CE
C
CB
C
EB
Values
880
(typ) 450
... 1120
0.675
(typ) 1.02 x
1.02
± 40
1.8
5.5
23
39
47
20 (≤ 100)
Symbol
T
op
; T
stg
V
CE
I
C
I
CS
V
EB
P
tot
R
thJA
Values
-40 ... 125
50
50
200
7
220
450
BPX 38
Unit
°C
V
mA
mA
V
mW
K/W
Unit
nm
nm
mm
2
mm x
mm
°
μA
μA
pF
pF
pF
nA
(typ (max)) I
CE0
2016-01-04
2
Version 1.3
Grouping
(T
A
= 25 °C, λ = 950 nm)
Group
Min Photocurrent
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, min
[µA]
BPX 38-2
BPX 38-3
BPX 38-4
BPX 38-5
Group
200
320
500
800
BPX 38
Max Photocurrent Typ Photocurrent Rise and fall time
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, max
[µA]
400
630
1000
E
V
= 1000 lx, Std.
Light A, V
CE
= 5 V
I
PCE
[µA]
950
1500
2300
3600
I
C
= 1 mA, V
CC
= 5
V, R
L
= 1 kΩ
t
r
, t
f
[µs]
9
12
15
18
Current gain
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
PCE
/ I
PCB
170
280
420
650
Collector-emitter saturation
voltage
I
C
= I
PCEmin
x 0.3,
E
e
= 0.5 mW/cm
2
V
CEsat
[mV]
BPX 38-2
BPX 38-3
BPX 38-4
BPX 38-5
Note.:
200
200
200
200
I
PCEmin
is the min. photocurrent of the specified group.
2016-01-04
3
Version 1.3
Relative Spectral Sensitivity
1)
page 9
S
rel
= f(λ)
Photocurrent
1)
page 9
I
PCE
= f(E
e
),
V
CE
= 5 V
BPX 38
Collector Current
1)
page 9
I
C
= f(V
CE
), I
B
= Parameter
Collector Current
1)
page 9
I
C
= f(V
CE
), I
B
= Parameter
2016-01-04
4
Version 1.3
Photocurrent
1)
page 9
I
PCE
/ I
PCE
(25°C) = f(T
A
), V
CE
= 5 V
Dark Current
1)
page 9
I
CEO
= f(V
CE
), E = 0
BPX 38
Dark Current
1)
page 9
I
CEO
/I
CEO
(25°) = f(T
A
), V
CE
= 25 V, E = 0
Collector-Base Capacitance
1)
page 9
C
CB
= f(V
CB
), f = 1 MHz, E = 0
2016-01-04
5
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