HYS72D256520GR-8-A datasheet, PDF

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HYS72D256520GR-8-A: DescriptionDDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184; Categorystorage; File Size302KB，16 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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HYS72D256520GR-8-A Overview

DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184

HYS72D256520GR-8-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
access mode	DUAL BANK PAGE BURST
Maximum access time	0.8 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	143 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	19327352832 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	184
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum slew rate	7.2 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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HYS 72D256520GR-7/8-A

Low Profile Registered DDR-I SDRAM-Modules

2.5 V Low Profile 184-pin Registered DDR-I SDRAM Modules

2GByte Modules

PC1600 & PC2100

Preliminary Datasheet Rev. 0.9

• 184-pin Registered 8-Byte Dual-In-Line

DDR-I SDRAM Module for “1U” PC,

Workstation and Server main memory

applications

• Two bank 256M x 72 organization

• JEDEC standard Double Data Rate

Synchronous DRAMs (DDR-I SDRAM) with a

single + 2.5 V (

0.2 V) power supply

• Built with DDR-I SDRAMs in 66-Lead TSOPII

package

• Programmable CAS Latency, Burst Length,

and Wrap Sequence (Sequential &

Interleave)

• Auto Refresh (CBR) and Self Refresh

• Performance:

-7

Component Speed Grade

Module Speed Grade

• All inputs and outputs SSTL_2 compatible

• Re-drive for all input signals using register

and PLL devices.

• Serial Presence Detect with E

PROM

• Low Profile Modules form factor:

133.35 mm x 30,40 mm (1.2”) x 4.00 mm

(6,80 mm with stacked components)

• Based on Jedec standard reference card

layout RawCard “M”

• Gold plated contacts

-8

PC1600

125

100

Unit

DDR266A DDR200

PC2100

143

133

MHz

Clock Frequency (max.) @ CL = 2.5

Clock Frequency (max.) @ CL = 2

The HYS72Dxx5x0GR are low profile versions of the standard Registered DIMM modules with 1.2”

inch (30,40 mm) height for 1U Server Applications. The Low Profile DIMM versions are available as

256M x 72 (2GB).

The memory array is designed with Double Data Rate Synchronous DRAMs for ECC applications.

All control and address signals are re-driven on the DIMM using register devices and a PLL for the

clock distribution. This reduces capacitive loading to the system bus, but adds one cycle to the

SDRAM timing. A variety of decoupling capacitors are mounted on the PC board. The DIMMs

feature serial presence detect based on a serial E

PROM device using the 2-pin I

C protocol. The

first 128 bytes are programmed with configuration data and the second 128 bytes are available to

the customer.

INFINEON Technologies

2002-05-08 (0.9)

HYS72D256520GR-8-A Related Products

	HYS72D256520GR-8-A	HYS72D256520GR-7	HYS72D256520HR-8-A
Description	DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184	Memory IC, 256MX72, CMOS, PDMA184	DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184
Maker	Infineon	Infineon	Infineon
package instruction	DIMM, DIMM184	DIMM, DIMM184	,
Reach Compliance Code	compliant	unknown	compliant
Maximum access time	0.8 ns	0.75 ns	0.8 ns
JESD-30 code	R-XDMA-N184	R-PDMA-N184	R-XDMA-N184
memory density	19327352832 bit	19327352832 bit	19327352832 bit
memory width	72	72	72
Number of terminals	184	184	184
word count	268435456 words	268435456 words	268435456 words
character code	256000000	256000000	256000000
Maximum operating temperature	70 °C	70 °C	70 °C
organize	256MX72	256MX72	256MX72
Package body material	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL
Is it Rohs certified?	incompatible	-	conform to
Parts packaging code	DIMM	-	DIMM
Contacts	184	-	184
ECCN code	EAR99	-	EAR99
Is Samacsys	N	N	-
access mode	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	143 MHz	143 MHz	-
I/O type	COMMON	COMMON	-
Memory IC Type	DDR DRAM MODULE	-	DDR DRAM MODULE
Number of functions	1	-	1
Number of ports	1	-	1
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS
Output characteristics	3-STATE	3-STATE	-
encapsulated code	DIMM	DIMM	-
Encapsulate equivalent code	DIMM184	DIMM184	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
power supply	2.5 V	2.5 V	-
refresh cycle	8192	8192	-
self refresh	YES	-	YES
Maximum supply voltage (Vsup)	2.7 V	-	2.7 V
Minimum supply voltage (Vsup)	2.3 V	-	2.3 V
Terminal pitch	1.27 mm	1.27 mm	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
Base Number Matches	1	1	-

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