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TJ60S06M3L(T6L1,NQ

Description
MOSFET P-CH 60V 60A DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size2MB,63 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

TJ60S06M3L(T6L1,NQ Overview

MOSFET P-CH 60V 60A DPAK-3

TJ60S06M3L(T6L1,NQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Samacsys DescriptionMOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112
Avalanche Energy Efficiency Rating (Eas)132 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.0145 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)120 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
2009-9
PRODUCT GUIDE
MOSFETs
SEMICONDUCTOR
http://www.semicon.toshiba.co.jp/eng
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