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MS2267

Description
TRANS RF BIPO 575W 20A M214
CategoryDiscrete semiconductor    The transistor   
File Size223KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MS2267 Overview

TRANS RF BIPO 575W 20A M214

MS2267 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instruction0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionBASE
Maximum collector current (IC)20 A
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandL BAND
JESD-30 codeS-CDFM-F2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature250 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)575 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2267
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
960 – 1215MHz
50 VOLTS
5:1 VSWR CAPABILITY @ RATED CONDITIONS
INPUT/OUTPUT MATCHING
P
OUT
= 250 WATTS
G
P
= 8.0 dB MINIMUM
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2267 is a high power Class C NPN transistor
specifically designed for TACAN/DME applications.
This device is capable of operation under moderate pulse
width and duty cycles. Low thermal resistance and
computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The MS2267 utilizes an emitter ballasted die geometry
capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
P
DISS
I
C
Vcc
T
J
T
STG
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Parameter
Power Dissipation* (T
C
90°C)
°
Value
575
20
50
250
-65 to +200
Unit
W
A
V
°
C
°
C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance∗
(1)
0.28
°
C/W
* Applies only to rated RF amplifier operation
(1)
Infra-red scan of hot spot junction temperature at rated RF operating conditions
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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