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2SK1829TE85LF

Description
MOSFET N-CH 20V 0.05A USM
Categorysemiconductor    Discrete semiconductor   
File Size301KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SK1829TE85LF Overview

MOSFET N-CH 20V 0.05A USM

2SK1829TE85LF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C50mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V
Rds On (maximum value) when different Id, Vgs40 ohms @ 10mA, 2.5V
Vgs (th) (maximum value) when different Id-
Vgs (maximum value)10V
Input capacitance (Ciss) at different Vds (maximum value)5.5pF @ 3V
FET function-
Power dissipation (maximum)100mW(Ta)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingSC-70
Package/casingSC-70,SOT-323
2SK1829
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1829
High Speed Switching Applications
Analog Switch Applications
2.5 V gate drive
Low threshold voltage: V
th
= 0.5 to 1.5 V
High speed
Enhancement-mode
Small package
Unit: mm
Marking
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
20
10
50
100
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Start of commercial production
1991-02
1
2014-03-01

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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