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2SK208-GR(TE85L,F)

Description
MOSFET N-CH S-MINI FET
Categorysemiconductor    Discrete semiconductor   
File Size289KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SK208-GR(TE85L,F) Overview

MOSFET N-CH S-MINI FET

2SK208-GR(TE85L,F) Parametric

Parameter NameAttribute value
FET typeN channel
Current at different Vds (Vgs=0) - Drain (Idss)2.6mA @ 10V
Voltage at different Id - cutoff (VGS off)400mV @ 100nA
Input capacitance (Ciss) at different Vds (maximum value)8.2pF @ 10V
Power - Max100mW
Operating temperature125°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSC-59
2SK208
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and
Condenser Microphone Applications
High breakdown voltage: V
GDS
=
−50
V
High input impedance: I
GSS
=
−1.0
nA (max) (V
GS
=
−30
V)
Low noise: NF = 0.5dB (typ.) (R
G
= 100 kΩ, f = 120 Hz)
Small package.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−50
10
100
125
−55
to 125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
I
GSS
V
(BR) GDS
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
Min
−50
0.3
−0.4
1.2
Typ.
8.2
2.6
0.5
Max
−1.0
6.5
−5.0
Unit
nA
V
mA
V
mS
pF
pF
dB
I
DSS
V
DS
=
10 V, V
GS
=
0
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
GD
= −10
V, I
D
=
0, f
=
1 MHz
V
DS
=
15 V, V
GS
=
0
R
G
=
100 kΩ, f
=
120 Hz
Note: I
DSS
classification R: 0.30 to 0.75 mA, O: 0.60 to 1.40 mA, Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA
Marking
Start of commercial production
1981-06
1
2014-03-01

2SK208-GR(TE85L,F) Related Products

2SK208-GR(TE85L,F) 2SK208-Y(T5LALPS,F 2SK208-Y(T5LKEHINF 2SK208-GR(T5LMAA,F 2SK208-O(T5RKOYO,F 2SK208-GR(TE85L) 2SK208-R(TE85L,F) 2SK208-Y(TE85L,F)
Description MOSFET N-CH S-MINI FET Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET Small Signal Field-Effect Transistor MOSFET N-CH 50V S-MINI
package instruction - SMALL OUTLINE, R-PDSO-G3 SC-59, TO-236MOD, 3 PIN SC-59, TO-236MOD, 3 PIN SMALL OUTLINE, R-PDSO-G3 , SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code - unknow unknow unknow unknow unknown unknown unknown
Other features - LOW NOISE LOW NOISE LOW NOISE LOW NOISE - LOW NOISE LOW NOISE
Configuration - SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
FET technology - JUNCTION JUNCTION JUNCTION JUNCTION - JUNCTION JUNCTION
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
Number of components - 1 1 1 1 - 1 1
Number of terminals - 3 3 3 3 - 3 3
Operating mode - DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE - DEPLETION MODE DEPLETION MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
surface mount - YES YES YES YES - YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING - GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL - DUAL DUAL
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON - SILICON SILICON
Base Number Matches - 1 1 1 1 1 1 1

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