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2SK3476(TE12L,Q)

Description
MOSF RF N CH 20V 3A PW-X
CategoryDiscrete semiconductor    The transistor   
File Size171KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SK3476(TE12L,Q) Overview

MOSF RF N CH 20V 3A PW-X

2SK3476(TE12L,Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Base Number Matches1
2SK3476
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Output power: P
O
= 7.0 W (min)
Gain: G
P
= 11.4dB (min)
Drain efficiency:
η
D
= 60% (min)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
V
DSS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
20
10
3
20
150
−45
to 150
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
Note:
TOSHIBA
2-5N1A
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 0.08 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
2
Type name
1
UC
F
**
3
Dot
Lo No.
1. Gate
2. Source (heat sink)
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
Start of commercial production
2000-08
1
2014-03-01

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Description MOSF RF N CH 20V 3A PW-X Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: - Drain-source on-resistance: - Maximum power dissipation (Ta=25°C): 20W Type: N-channel RF use, N-channel, 20V, 3A
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