BSS 131
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate- reverse side
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJSR
-55 ... + 150
-55 ... + 150
˚C
≤
350
≤
285
E
55 / 150 / 56
K/W
1) For package mounted on aluminium
15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
V
(BR)DSS
V
240
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
I
DSS
1.4
2
Zero gate voltage drain current
V
DS
= 240 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 240 V,
V
GS
= 0 V,
T
j
= 125 ˚C
V
DS
= 130 V,
V
GS
= 0 V,
T
j
= 25 ˚C
-
-
-
I
GSS
0.1
2
-
1
60
30
µA
nA
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
1
10
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.1 A
V
GS
= 4.5 V,
I
D
= 0.1 A
Ω
-
-
12
15
16
26
Data Sheet
2
05.99
BSS 131
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.1 A
g
fs
S
0.06
0.14
-
pF
-
60
80
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
8
12
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
3.5
5
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.26 A
R
GS
= 50
Ω
-
t
r
5
8
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.26 A
R
GS
= 50
Ω
-
t
d(off)
8
12
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.26 A
R
GS
= 50
Ω
-
t
f
12
16
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.26 A
R
GS
= 50
Ω
-
15
20
Data Sheet
3
05.99
BSS 131
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
A
= 25 ˚C
I
S
A
-
-
0.1
Inverse diode direct current,pulsed
T
A
= 25 ˚C
I
SM
-
V
SD
-
0.4
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.2 A,
T
j
= 25 ˚C
-
0.8
1.2
Data Sheet
4
05.99
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