NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regu-
lator circuits.
Features:
D
High Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 160V
D
High DC Current Gain: h
FE
= 35 Typ @ I
C
= 8A
D
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 8A
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Note 1. Pulse Test: Pulse Width
≤
5ms, Duty Cycle
≥
10%.
Electrical Charactertistics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector–Emitter Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 2
I
CEX
I
CEO
Emitter–Base Cutoff Current
Collector–Base Cutoff Current
I
EBO
I
CBO
V
CE
= 160V, V
EB(off)
= 1.5V
V
CE
= 160V, V
EB9off)
= 1.5V, T
C
= +150°C
V
CE
= 80V, I
B
= 0
V
BE
= 7V, I
C
= 0
V
CB
= 160V, I
E
= 0
160
–
–
–
–
–
–
–
–
–
–
–
–
0.1
5.0
750
1.0
750
V
mA
mA
µA
mA
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≥
2%.
Electrical Charactertistics (Cont’d):
(T
C
= +25°C unless otherwise specified)
Parameter
ON Characteristics
(Note 2)
DC Current Gain
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ob
V
CE
= 2V, I
C
= 8A
V
CE
= 4V, I
C
= 16A
Collector–Emitter Saturation Voltage
I
C
= 8A, I
B
= 0.8A
I
C
= 16A, I
B
= 2A
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current–Gain Bandwidth Product
Output Capacitance
V
CE
= 20V, I
C
= 1A, f = 0.5MHz,
Note 3
V
CB
= 10V, I
E
= 0, f = 0.1MHz
1.0
–
–
–
–
800
MHz
pF
I
C
= 16A, I
B
= 2A
V
CE
= 4V, I
C
= 16A
15
8
–
–
–
–
35
15
–
–
–
–
–
–
2.0
3.5
3.9
3.9
V
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≥
2%.
Note 3. f
T
= |h
FE
|
S
f
test
.
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
.156
(3.96)
Dia.
B
C
E
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE:
Dotted line indicates that
case may have square corners
Industrial Control Electronics
京公网安备 11010802033920号
EEWORLD
