NTE2363 datasheet, PDF - EEWORLD Datasheet

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NTE2363: DescriptionSilicon Complementary Transistors High Current General Purpose Amp/Switch; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE2363 Overview

Silicon Complementary Transistors High Current General Purpose Amp/Switch

NTE2363 Parametric

Parameter Name	Attribute value
Maker	NTE
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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NTE2363 (NPN) & NTE2364 (PNP)

Silicon Complementary Transistors

High Current General Purpose Amp/Switch

Features:

Low Saturation Voltage

Large Current Capacity and Wide ASO

Applications:

Power Supplies

Relay Drivers

Lamp Drivers

Automotive Wiring

Absolute Maximum Ratings:

= +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, I

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Allowable Collector Dissipation, P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Junction Temperature, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Ambient Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1 For PNP device (NTE2364), voltage and current values are negative.

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Symbol

CBO

EBO

(1)

(2)

Test Conditions

= 50V, I

= 0

= 4V, I

= 0

= 2V, I

= 100mA

= 2V, I

= 1.5A

= 10V, I

= 50mA

Min

–

200

–

Typ

–

150

Max

0.1

400

–

MHz

Unit

µA

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