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BDY58

Description
25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size152KB,3 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

BDY58 Overview

25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3

BDY58 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current25 A
Maximum Collector-Emitter Voltage125 V
stateACTIVE
packaging shapeROUND
Package SizeFLANGE MOUNT
Terminal formPIN/PEG
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor20
Rated crossover frequency7 MHz
BDY57 – BDY58
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
S
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Ratings
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
@ T
C
= 25°
BDY57
BDY58
BDY57
BDY58
Value
80
125
120
160
10
25
6
Unit
V
V
V
A
A
Watts
175
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY57
BDY58
Value
1
Unit
°C/W
COMSET SEMICONDUCTORS
1/3

BDY58 Related Products

BDY58 BDY57
Description 25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3 25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3
Number of terminals 2 2
Transistor polarity NPN NPN
Maximum collector current 25 A 25 A
Maximum Collector-Emitter Voltage 125 V 125 V
state ACTIVE ACTIVE
packaging shape ROUND ROUND
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form PIN/PEG PIN/PEG
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location BOTTOM BOTTOM
Packaging Materials METAL METAL
structure SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 20 20
Rated crossover frequency 7 MHz 7 MHz
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