BDY57 datasheet, PDF - EEWORLD Datasheet

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BDY57: Description25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3; Categorysemiconductor Discrete semiconductor; File Size152KB，3 Pages; ManufacturerETC

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BDY57 Overview

25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3

BDY57 Parametric

Parameter Name	Attribute value
Number of terminals	2
Transistor polarity	NPN
Maximum collector current	25 A
Maximum Collector-Emitter Voltage	125 V
state	ACTIVE
packaging shape	ROUND
Package Size	FLANGE MOUNT
Terminal form	PIN/PEG
terminal coating	NOT SPECIFIED
Terminal location	BOTTOM
Packaging Materials	METAL
structure	SINGLE
Shell connection	COLLECTOR
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	20
Rated crossover frequency	7 MHz

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BDY57 – BDY58

NPN SILICON TRANSISTORS, DIFFUSED MESA

LF Large Signal Power Amplification

High Current Fast Switching

ABSOLUTE MAXIMUM RATINGS

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

B

P

TOT

T

J

T

S

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation

Junction Temperature

Storage Temperature

Ratings

BDY57

BDY58

BDY57

BDY58

BDY57

BDY58

BDY57

BDY58

BDY57

BDY58

@ T

C

= 25°

BDY57

BDY58

BDY57

BDY58

Value

80

125

120

160

10

25

6

Unit

V

A

Watts

175

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

R

thJ-C

Ratings

Thermal Resistance, Junction to Case

BDY57

BDY58

Value

1

Unit

°C/W

COMSET SEMICONDUCTORS

1/3

BDY57 Related Products

	BDY57	BDY58
Description	25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3	25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3
Number of terminals	2	2
Transistor polarity	NPN	NPN
Maximum collector current	25 A	25 A
Maximum Collector-Emitter Voltage	125 V	125 V
state	ACTIVE	ACTIVE
packaging shape	ROUND	ROUND
Package Size	FLANGE MOUNT	FLANGE MOUNT
Terminal form	PIN/PEG	PIN/PEG
terminal coating	NOT SPECIFIED	NOT SPECIFIED
Terminal location	BOTTOM	BOTTOM
Packaging Materials	METAL	METAL
structure	SINGLE	SINGLE
Shell connection	COLLECTOR	COLLECTOR
Number of components	1	1
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	20	20
Rated crossover frequency	7 MHz	7 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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