BLF245C datasheet, PDF - EEWORLD Datasheet

BLF245C: DescriptionTRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power; CategoryThe transistor; File Size29KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF245C Overview

TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-CDFM-F8
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	85 W
Minimum power gain (Gp)	16 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	BLF245C	BLF221B
Description	TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-39, FET RF Small Signal
Maker	NXP	NXP
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	DRAIN
Configuration	COMMON SOURCE, 2 ELEMENTS	SINGLE
Minimum drain-source breakdown voltage	65 V	40 V
Maximum drain current (ID)	4.5 A	1 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F8	O-MBCY-W3
Number of components	2	1
Number of terminals	8	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	METAL
Package shape	RECTANGULAR	ROUND
Package form	FLANGE MOUNT	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	85 W	7.4 W
Minimum power gain (Gp)	16 dB	9 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	FLAT	WIRE
Terminal location	DUAL	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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