BLF221B datasheet, PDF - EEWORLD Datasheet

BLF221B: DescriptionTRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-39, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size29KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF221B Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-39, FET RF Small Signal

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	7.4 W
Maximum power dissipation(Abs)	7.4 W
Minimum power gain (Gp)	9 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	BLF221B	BLF245C
Description	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-39, FET RF Small Signal	TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power
Maker	NXP	NXP
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Shell connection	DRAIN	ISOLATED
Configuration	SINGLE	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	40 V	65 V
Maximum drain current (ID)	1 A	4.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	O-MBCY-W3	R-CDFM-F8
Number of components	1	2
Number of terminals	3	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	RECTANGULAR
Package form	CYLINDRICAL	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	7.4 W	85 W
Minimum power gain (Gp)	9 dB	16 dB
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	WIRE	FLAT
Terminal location	BOTTOM	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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