100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/
or -55°C options, refer to
SiT8919
and
SiT8921
Low power consumption of 4.9 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Ideal for GPON/EPON, network switches, routers,
servers, embedded systems
Ideal for Ethernet, PCI-E, DDR, etc.
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
115
-20
-25
-50
Operating Temperature Range
T_use
-20
-40
Supply Voltage
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
Idd
–
–
–
OE Disable Current
Standby Current
I_OD
I_std
–
–
–
–
–
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
45
–
–
–
Output High Voltage
Output Low Voltage
VOH
VOL
90%
–
Typ.
–
–
–
–
–
–
1.8
2.5
2.8
3.0
3.3
–
6.2
5.5
4.9
–
–
2.6
1.4
0.6
–
1
1.3
0.8
–
–
Max.
137
+20
+25
+50
+70
+85
1.98
2.75
3.08
3.3
3.63
3.63
7.5
6.4
5.6
4.2
4.0
4.3
2.5
1.3
55
2
2.5
2
–
10%
Unit
MHz
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
A
A
A
%
ns
ns
ns
Vdd
Vdd
No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V, 3.3V or
2.25 to 3.63V
No load condition, f = 125 MHz, Vdd = 2.5V
No load condition, f = 125 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
Vdd = 1.8V, OE = GND, Output in high-Z state
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
All Vdds
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
Inclusive of Initial tolerance at 25°C, 1
st
year aging at 25°C,
and variations over operating temperature, rated power
supply voltage and load.
Condition
Frequency Range
Frequency Stability and Aging
Operating Temperature Range
Extended Commercial
Industrial
Contact
SiTime
for 1.5V support
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Rev 1.04
January 30, 2018
www.sitime.com
SiT8009B
High Frequency, Low Power Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Symbol
Min.
Typ.
–
–
87
Max.
–
30%
150
Unit
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE logic high or logic low, or ST logic high
Condition
Input Characteristics
VIH
VIL
Z_in
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
T_start
T_oe
T_resume
T_jitt
–
–
–
–
–
Peak-to-peak Period Jitter
T_pk
–
–
RMS Phase Jitter (random)
T_phj
–
–
Vdd
Vdd
k
–
–
Pin 1, ST logic low
̅ ̅̅
M
Startup and Resume Timing
–
–
–
5
122
5
Jitter
1.9
1.8
12
14
0.5
1.3
3
4
25
30
0.9
2
ps
ps
ps
ps
ps
ps
f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 125 MHz, Vdd = 1.8V
f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 125 MHz, Vdd = 1.8V
Integration bandwidth = 900 kHz to 7.5 MHz
Integration bandwidth = 12 kHz to 20 MHz
ms
ns
ms
Measured from the time Vdd reaches its rated minimum value
f = 137 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
̅ ̅̅
Table 2. Pin Description
Pin
Symbol
[1]
Functionality
Output Enable
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H
[1]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open
[1]
: Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
OE/ST/NC
Top View
1
OE/ST /NC
̅ ̅̅
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
̅ ̅̅
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
www.sitime.com
SiT8009B
High Frequency, Low Power Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free
soldering guidelines)
Junction Temperature
[3]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
70°C
85°C
Maximum Operating Junction Temperature
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.04
Page 3 of 17
www.sitime.com
SiT8009B
High Frequency, Low Power Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test Point
tr
4
Power
Supply
0.1 uF
1
2
3
15pF
(including probe
and fixture
capacitance)
tf
80% Vdd
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/ST Function
1 kΩ
Figure 2. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
[7]
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST̅ Mode)
̅ ̅
Figure 5. Standby Resume Timing ( ST̅ Mode Only)
̅ ̅
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT8009 has “no runt” pulses and “no glitch” output during startup or resume.
I just read this RFID article and I think it is very valuable, so I share it with you. However, there seem to be very few applications of this type of tag. I welcome experts to discuss it....
The difference between lead-free soldering iron tips and lead soldering iron tips: First, lead-free soldering iron tips are relative to the content of lead substances. The content of lead, cadmium, me...
I don't know much about power supplies, please advise!
I designed a power supply using TI's TPS40055, with an input of 24V and an output of 5v/15A. The parameters were designed using TI's SwitcherPro ...
[i=s]This post was last edited by strong161 on 2017-6-5 15:15[/i] There are several books published, as shown below, all of them are quite new. [color=#ff0000]Honest transaction,[/color]The book above...
Infineon Technologies has launched the affordable, low-power tuner integrated circuit Taifun TUA6039. TUA6039 integrates RF (radio frequency) and IF (intermediate frequency) functions on a single chip...
Long ago, the lifespan of cars in my country was 15 years. Once a car reached 15 years old, it was forced to be scrapped. However, the policy was later changed. As long as the car does not exceed 6...[Details]
In recent years, the government has increasingly supported electric vehicles, and the number of electric vehicles has increased. Observant drivers will notice that there are many more green license...[Details]
Recently,
Xpeng Motors and Xinlian Integrated Circuit jointly announced the mass production of China's first hybrid silicon carbide product.
Designed and developed by Xpeng Motors and joint...[Details]
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[Details]
The 2025 China International Automotive Testing Exhibition will be held at the Shanghai World Expo Exhibition and Convention Center from August 27 to 29, 2025.
Clacton Seafront, UK, ...[Details]
With the increasing popularity of automated equipment, linear modules, a common auxiliary device for automated equipment, have also seen a bright future. In particular, in recent years, many small ...[Details]
Inverter power supplies on the market can generally be divided into two categories: sine wave inverters and square wave inverters. Some engineers also like to categorize pure sine wave inverters as...[Details]
There are more and more electric vehicles. Recently, I have heard some news about electric vehicles performing poorly in winter. I would like to briefly introduce whether heat pump technology is mo...[Details]
Speaking of the problem of vehicle spontaneous combustion, whether it is a pure electric vehicle or a fuel vehicle, there will be incidents of spontaneous combustion. For the same spontaneous combu...[Details]
Blackfin® 16-/32-bit embedded processors offer high performance, low power consumption, flexible software features, and scalability, making them suitable for converged applications such as multi-fo...[Details]
The motor is a very important component for new energy vehicles. In terms of vehicle power, pure electric vehicles use electric motors instead of traditional diesel/gasoline engines. For electric v...[Details]
When we pick up an unfamiliar object, the first thing we want to know is what it actually does. A drive shaft, as the name suggests, is a shaft that transmits power. It's the transmission medium th...[Details]
The drive shaft is a high-speed, low-support rotating body, so its dynamic balance is crucial. Generally, drive shafts undergo dynamic balancing tests and adjustments on a balancing machine before ...[Details]
With the global number of new energy vehicles expected to exceed 45 million by 2025, the performance boundaries of battery management systems are being reshaped.
Infineon Technologies
'
...[Details]
Relying on Zena CSS and Arm's complete partner ecosystem, we will accelerate the implementation of autonomous driving.
Close your eyes and imagine yourself getting into your car, rea...[Details]
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
