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IRL3715STRL

Description
MOSFET N-CH 20V 54A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size312KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRL3715STRL Overview

MOSFET N-CH 20V 54A D2PAK

IRL3715STRL Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C54A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs14 milliohms @ 26A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)17nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1060pF @ 10V
FET function-
Power dissipation (maximum)3.8W(Ta),71W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD2PAK
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
PD - 94194A
SMPS MOSFET
IRL3715
IRL3715S
IRL3715L
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
V
DSS
20V
R
DS(on)
max
14mΩ
I
D
54A
†
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3715
D
2
Pak
IRL3715S
TO-262
IRL3715L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
Maximum Power Dissipation
…
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
54
†
38
†
210
71
3.8
0.48
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
„
Junction-to-Ambient
„
Junction-to-Ambient (PCB mount)
…
Typ.
–––
0.50
–––
–––
Max.
2.1
–––
62
40
Units
°C/W
Notes

through
†
are on page 11
www.irf.com
1
6/5/01

IRL3715STRL Related Products

IRL3715STRL IRL3715 IRL3715L IRL3715S IRL3715STRR IRL3715TR IRL3715TRL IRL3715TRR
Description MOSFET N-CH 20V 54A D2PAK MOSFET N-CH 20V 54A TO-220AB MOSFET N-CH 20V 54A TO-262 MOSFET N-CH 20V 54A D2PAK MOSFET N-CH 20V 54A D2PAK MOSFET N-CH 20V 54A TO-220AB MOSFET N-CH 20V 54A TO-220AB MOSFET N-CH 20V 54A TO-220AB
FET type N channel N channel N channel N channel N channel N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 20V 20V 20V 20V 20V 20V 20V 20V
Current - Continuous Drain (Id) at 25°C 54A(Tc) 54A(Tc) 54A(Tc) 54A(Tc) 54A(Tc) 54A(Tc) 54A(Tc) 54A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V 14 milliohms @ 26A, 10V
Vgs (th) (maximum value) when different Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 17nC @ 4.5V 17nC @ 4.5V 17nC @ 4.5V 17nC @ 4.5V 17nC @ 4.5V 17nC @ 4.5V 17nC @ 4.5V 17nC @ 4.5V
Vgs (maximum value) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1060pF @ 10V 1060pF @ 10V 1060pF @ 10V 1060pF @ 10V 1060pF @ 10V 1060pF @ 10V 1060pF @ 10V 1060pF @ 10V
Power dissipation (maximum) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc) 3.8W(Ta),71W(Tc)
Installation type surface mount Through hole Through hole surface mount surface mount Through hole Through hole Through hole
Supplier device packaging D2PAK TO-220AB TO-262 D2PAK D2PAK TO-220AB TO-220AB TO-220AB
Package/casing TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-220-3 TO-262-3, long lead, I²Pak, TO-262AA TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-220-3 TO-220-3 TO-220-3
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) - - -
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