PD - 94194A
SMPS MOSFET
IRL3715
IRL3715S
IRL3715L
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
V
DSS
20V
R
DS(on)
max
14mΩ
I
D
54A
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3715
D
2
Pak
IRL3715S
TO-262
IRL3715L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
54
38
210
71
3.8
0.48
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
2.1
–––
62
40
Units
°C/W
Notes
through
are on page 11
www.irf.com
1
6/5/01
IRL3715/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
11
15
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
14
V
GS
= 10V, I
D
= 26A
mΩ
20
V
GS
= 4.5V, I
D
= 21A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
11
3.8
4.4
11
6.4
73
12
5.1
1060
700
120
Max. Units
Conditions
–––
S
V
DS
= 10V, I
D
= 21A
17
I
D
= 21A
–––
nC
V
DS
= 10V
–––
V
GS
= 4.5V
17
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 10V
–––
I
D
= 21A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
110
21
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery Time
Recovery Charge
Recovery Time
Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
0.8
37
28
38
30
54
A
210
1.3
–––
56
42
57
45
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
T
J
= 125°C, I
S
= 21A, V
GS
= 0V
T
J
= 25°C, I
F
= 21A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 21A, V
R
=20V
di/dt = 100A/µs
2
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IRL3715/S/L
1000
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
2.5V
1
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
100
10
2.5V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
= 52A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
1.5
100
T
J
= 175
°
C
1.0
0.5
10
2.0
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL3715/S/L
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
14
12
I
D
= 21A
V
DS
= 16V
V
DS
= 10V
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance(pF)
1000
Ciss
Coss
10
8
6
100
Crss
4
2
0
0
5
10
10
1
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
15
20
25
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
T
J
= 175
°
C
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
ID , Drain-to-Source Current (A)
100
100µsec
1
T
J
= 25
°
C
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
0.1
0.2
V
GS
= 0 V
0.7
1.2
1.7
2.2
1
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRL3715/S/L
60
V
DS
LIMITED BY PACKAGE
R
D
50
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
40
-
V
DD
4.5V
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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