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CMS11(TE12L)

Description
DIODE SCHOTTKY 40V 2A MFLAT
CategoryDiscrete semiconductor    diode   
File Size173KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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CMS11(TE12L) Overview

DIODE SCHOTTKY 40V 2A MFLAT

CMS11(TE12L) Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionM-FLAT-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
CMS11
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS11
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.55 V (max)
Average forward current: I
F (AV)
= 2.0 A
Repetitive peak reverse voltage: V
RRM
= 40 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Symbol
V
RRM
I
F (AV)
(Note 1)
I
F (AV)
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
I
FSM
T
j
T
stg
Rating
40
2.0
(Ta
=
34°C)
2.0
(Tℓ
=
119°C)
30 (50 Hz)
−40~150
−40~150
Unit
V
Average forward current
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Device mounted on a ceramic board
(board size: 50 mm
×
50 mm, soldering land: 2 mm
×
2 mm)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
C
j
Test Condition
I
FM
=
0.5 A
I
FM
=
1.0 A
I
FM
=
2.0 A
V
RRM
=
5.0 V
V
RRM
=
40 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.38
0.42
0.49
2.0
20.0
95
Max
0.55
500
60
°C/W
μA
pF
V
Unit
135
16
R
th (j-ℓ)
Start of commercial production
2000-07
1
2013-11-01

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Description DIODE SCHOTTKY 40V 2A MFLAT DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 2A Forward voltage drop (Vf): 550mV @ 2A 2A, 40V, SILICON, RECTIFIER DIODE Rectifier Diode
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