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CMS11(TE12L,Q,M(LF)

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size173KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

CMS11(TE12L,Q,M(LF) Overview

Rectifier Diode

CMS11(TE12L,Q,M(LF) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
CMS11
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS11
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.55 V (max)
Average forward current: I
F (AV)
= 2.0 A
Repetitive peak reverse voltage: V
RRM
= 40 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Symbol
V
RRM
I
F (AV)
(Note 1)
I
F (AV)
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
I
FSM
T
j
T
stg
Rating
40
2.0
(Ta
=
34°C)
2.0
(Tℓ
=
119°C)
30 (50 Hz)
−40~150
−40~150
Unit
V
Average forward current
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Device mounted on a ceramic board
(board size: 50 mm
×
50 mm, soldering land: 2 mm
×
2 mm)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
C
j
Test Condition
I
FM
=
0.5 A
I
FM
=
1.0 A
I
FM
=
2.0 A
V
RRM
=
5.0 V
V
RRM
=
40 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.38
0.42
0.49
2.0
20.0
95
Max
0.55
500
60
°C/W
μA
pF
V
Unit
135
16
R
th (j-ℓ)
Start of commercial production
2000-07
1
2013-11-01

CMS11(TE12L,Q,M(LF) Related Products

CMS11(TE12L,Q,M(LF) CMS11(TE12L) CMS11(TE12L,Q,M) CMS11(T2L,TEMQ)
Description Rectifier Diode DIODE SCHOTTKY 40V 2A MFLAT DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 2A Forward voltage drop (Vf): 550mV @ 2A 2A, 40V, SILICON, RECTIFIER DIODE
Maker Toshiba Semiconductor Toshiba Semiconductor - Toshiba Semiconductor
Reach Compliance Code unknown unknown - unknown
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE

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