BF721 datasheet, PDF - EEWORLD Datasheet

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BF721: DescriptionPower Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryThe transistor; File Size43KB，1 Pages; ManufacturerDiodes Incorporated

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BF721 Overview

Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

BF721 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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Not Recommended for New Design

Please Use DZTA92

SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 – MARCH 2001

✪

FEATURES

* High breakdown and low saturation voltages

APPLICATIONS

* Suitable for video output stages in TV sets

* Switching power supplies

COMPLEMENTARY TYPE:-

BF720

PARTMARKING DETAILS:-

BF721

C

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-300

-5

-100

-50

-2

-55 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base BF721

Breakdown

Voltage

Collector-Emitter BF721

Breakdown

Voltage

Emitter-Base

Breakdown Voltage

SYMBOL

V

(BR)CBO

MIN.

-300

TYP.

MAX.

UNIT

V

CONDITIONS.

I

C

=-10

µ

A, I

E

=0

V

(BR)CEO

-300

V

I

C

=-1mA, I

B

=0*

V

(BR)EBO

-5

-10

-50

-10

-0.6

-0.9

-50

100

0.8

V

nA

µ

A

I

E

=-100

µ

A, I

C

=0

V

CB

=-200V, I

E

=0

†

Collector Cut-Off Current I

CBO

Collector Cut-Off

Current

I

CER

V

CE

=-200V, R

BE

=2.7K

Ω

V

CE

=-200V, R

BE

=2.7K

Ω

†

V

EB

=-5V, I

C

=0

I

C

=-30mA, I

B

=-5mA*

I

C

=-20mA, I

B

=-2mA*

I

C

=-25mA, V

CE

=-20V*

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

µ

A

V

MHz

pF

I

C

=-10mA, V

CE

=-10V

f=100MHz

V

CB

=-30V, f=1MHz

†T

amb

=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA92 datasheet.

TBA

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