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BC848BRBK

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryThe transistor   
File Size113KB,2 Pages
ManufacturerCentral Semiconductor
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BC848BRBK Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC848BRBK Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846 SERIES
BC847 SERIES
BC848 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC846,
BC847 and BC848 Series types are NPN Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for general purpose switching
and amplifier applications.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS
(TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Peak Base Current
IBM
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ
JA
BC848
30
30
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
BC847
50
45
5.0
100
200
200
350
-65 to +150
357
BC846
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB= 30V
ICBO
VCB= 30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BC848)
30
BVCBO
IC=10µA (BC847)
50
BVCBO
IC=10µA (BC846)
80
BVCEO
IC=10mA (BC848)
30
BVCEO
IC=10mA (BC847)
45
BVCEO
IC=10mA (BC846)
65
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
0.58
VBE(ON)
VBE(ON)
IC=10mA, VCE=5.0V
fT
VCE=5.0V, IC=10mA, f=100MHz
100
NF
VCE=5.0V, IC=200µA,
RS=2KΩ, f= 1KHz, BW=200Hz
BC846A
BC847A
BC848A
MIN
MAX
110
220
TYP
MAX
15
5.0
100
0.25
0.6
0.70
0.77
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
MHz
dB
10
BC846B
BC847B
BC848B
MIN
MAX
200
450
hFE
VCE=5.0V, IC=2.0mA
BC847C
BC848C
MIN
MAX
420
800
R0 (29-October 2003)

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