BSC0906NS
OptiMOS
TM
Power-MOSFET
Features
• Optimized for high performance Buck converter
• Optimized for clean switching
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
30
4.5
63
8.6
13
V
mW
A
nC
nC
PG-TDSON-8
Type
BSC0906NS
Package
PG-TDSON-8
Marking
0906NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
63
40
53
34
Unit
A
18
252
35
14
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=35 A,
R
GS
=25
W
J-STD20 and JESD22
Rev. 2.5
page 1
2013-08-05
BSC0906NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
30
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
4.2
20
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
2)
30
1.2
-
-
-
0.1
-
2.0
1
V
µA
-
-
-
-
2.0
10
10
5.1
3.8
4
80
100
100
6.4
4.5
8.0
-
W
S
nA
mW
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
40
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.5
page 2
2013-08-05
BSC0906NS
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
2.4
1.4
2.2
3.2
6.7
2.8
13
3
-
2.9
-
8.9
-
18
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=30 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
870
330
49
8.4
6.8
12
6.4
1200
440
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
5.4
8.6
-
11
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.89
30
120
-
A
V
Reverse recovery charge
4)
5)
Q
rr
-
5
-
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.5
page 3
2013-08-05
BSC0906NS
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
40
70
60
30
50
P
tot
[W]
40
20
I
D
[A]
0
40
80
120
160
30
20
10
10
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
2
10 µs
0.5
10 ms
1 ms
100 µs
10
0
0.2
0.1
0.05
0.02
0.01
single pulse
10
1
DC
Z
thJC
[K/W]
10
-1
10
-2
10
1
10
2
I
D
[A]
10
0
10
-1
10
-1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.5
page 4
2013-08-05
BSC0906NS
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
250
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
8
3.3 V
8V
5V
7
4.5 V
200
6
4.5 V
5V
8V
10 V
150
R
DS(on)
[mW]
3.3 V
5
I
D
[A]
4
100
3
2
50
1
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
250
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
160
200
120
150
g
fs
[S]
100
50
150 °C
25 °C
I
D
[A]
80
40
0
0
1
2
3
4
5
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 2.5
page 5
2013-08-05
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