D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
http://onsemi.com
•
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC546
BC547
BC548
Collector - Base Voltage
BC546
BC547
BC548
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
80
50
30
6.0
100
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
1
2
3
Symbol
V
CEO
65
45
30
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
54x
AYWWG
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= Device Code
x = 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
BC54x
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
BC546/D
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
Collector − Base Breakdown Voltage
(I
C
= 100
mAdc)
Emitter − Base Breakdown Voltage
(I
E
= 10
mA,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 70 V, V
BE
= 0)
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 35 V, V
BE
= 0)
(V
CE
= 30 V, T
A
= 125°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
h
FE
BC547A
BC546B/547B/548B
BC548C
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
BC547A/548A
BC546B/547B/548B
BC548C
V
CE(sat)
−
−
−
V
BE(sat)
V
BE(on)
0.55
−
f
T
BC546
BC547
BC548
C
obo
C
ibo
h
fe
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
NF
BC546
BC547
BC548
−
−
−
2.0
2.0
2.0
10
10
10
125
125
125
240
450
−
−
220
330
600
500
900
260
500
900
dB
150
150
150
−
−
300
300
300
1.7
10
−
−
−
4.5
−
pF
pF
−
−
−
0.7
0.77
MHz
−
0.09
0.2
0.3
0.7
0.25
0.6
0.6
−
V
V
−
−
−
110
110
110
110
200
420
−
−
−
90
150
270
−
−
−
180
290
520
120
180
300
−
−
−
450
800
800
220
450
800
−
−
−
V
−
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546/547/548
V
(BR)CEO
65
45
30
80
50
30
6.0
6.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
15
15
15
4.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CBO
V
V
(BR)EBO
V
I
CES
nA
mA
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector − Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
(I
C
= 10 mA, I
B
= See Note 1)
Base − Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
Base − Emitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small − Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 kW,
f = 1.0 kHz,
Df
= 200 Hz)
1. I
B
is value for which I
C
= 11 mA at V
CE
= 1.0 V.
http://onsemi.com
2
BC546B, BC547A, B, C, BC548B, C
BC547/BC548
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
2.0
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
1.0
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR−EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
400
300
200
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC546B, BC547A, B, C, BC548B, C
BC546
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 5.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
10 20
2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
A
= 25°C
1.6
20 mA
1.2
I
C
=
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
−1.0
−1.4
−1.8
q
VB
for V
BE
−2.2
−55°C to 125°C
0.8
0.4
−2.6
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
−3.0
0.2
0.5
10 20
1.0 2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
40
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
10
6.0
4.0
C
ob
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
500
V
CE
= 5 V
T
A
= 25°C
200
100
50
20
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4