InGaAs Photodetectors
SD 012-11-41-211
PACKAGE DIMENSIONS INCH [mm]
0.210 [5.33]
0.165 [4.19]
0.059 [1.50]
3X 0.019 [0.48]
0.184 [4.67]
88°
CHIP
0.145 [3.69]
0.50 [12.7]
CHIP DIMENSIONS INCH [mm]
0.016 [0.40]
1 ANODE
2 CASE GROUND
3 CATHODE
SCHEMATIC
0.016 [0.40]
TO-46 PACKAGE
.0079 [.200] ACTIVE AREA
FEATURES
•
Low noise
• Low dark current
• High response
DESCRIPTION
The
SD 012-11-41-211
is a high sensitivity low noise
characteristics InGaAs photodiode packaged in a
leaded hermetic TO-46 metal package.
APPLICATIONS
• Communication
• Industrial
• Medical
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
V
BR
T
STG
T
O
T
S
PARAMETER
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-55
-40
MIN
MAX
75
+100
+85
+260
UNITS
Responsivity (A/W)
1.2
1
0.8
0.6
0.4
0.2
0
800
SPECTRAL RESPONSE
V
°C
°C
°C
* 1/16 inch from case for 3 seconds max.
900
1000
1100
1200
1300
1400
1500
1600
1700
Wavelength (nM)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I
D
R
SH
C
J
lrange
R
V
BR
NEP
t
r
CHARACTERISTIC
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
V
R
= 5V
V
R
= 10 mV
V
R
= 5V,
f
= 1 MHz
Spot Scan
l=
1310nm, V
R
= 5V
I = 1μA
V
R
= 5V @
l=1310nm
RL = 50
Ω,V
R
= 5V
MIN
50
800
0.83
TYP
1
150
6
0.92
18
1.79X10
-14
1.15
MAX
5.0
9
1700
UNITS
nA
MW
pF
nm
A/W
V
W/
√
Hz
nS
**Response time of 10% to 90% is specified at 1310nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com
REV 3/30/06
RF/Wirelessly
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