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3GWJ42

Description
3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size163KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3GWJ42 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD

3GWJ42 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-201AD
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFORMED LEAD OPTIONS ARE AVAILABLE
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current120 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse current3000 µA
Maximum reverse recovery time0.035 µs
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Index Files: 2195  1922  1521  2564  944  45  39  31  52  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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