PRELIMINARY
16Mbit CMOS SRAM
ELECTRONICS
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating
FEATURES
Fast Access Time :
15 or 20ns
Single 5.0 ± 0.5V Power Supply
Power Dissipation
- Standby
80mA
- Operating
540mA (Max.)
TTL Compatible Inputs and Outputs
Fully Static Operation
- No clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Die Control : CS0#, CS1 #, CS2 # and
CS3 # chip select
DESCRIPTION
The 3DS16-325 is a 16,777,216 - bit high-speed Static Random Access
Memory organized as 4 banks of 262,144 words of 16 bits. Two
banks can operate silmultaneously, giving 32 bit processing.
The 3DS16-325 uses 32 common input and output lines and has
an output enable pin which operates faster than address access
time at read cycle.
Also it allows lower and upper byte access by data control
(UB#, LB#). The device is manufactured using 3D PLUS well
known MCM-V patended technology designed for high-speed circuit
applications. It is particularly well suited for use in high-density
high-speed system applications. The 3DS16-325 is packaged in
a 64-pin PQFP .
3DS16-325
PIN CONFIGURATION
PIN DESCRIPTION
3DS16-325S ( TOP VIEW )
A0-A17
WE#
Address Inputs
Write Enable
Chip Selects
Output Enable
Lower - Byte Control
Upper - Byte Control
Data Inputs / Outputs
5.0 V Power
Ground
No Connection
CS2#
CS1#
CS3#
I/O17
I/O18
I/O19
I/O29
I/O30
I/O31
I/O32
CS0#, CS1#
CS2#, CS3#
OE#
64
55
54
Ao
A1
A2
A3
A4
CSO#
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
1
PQFP64
22
23
33
32
A17
A16
A15
OE#
UB#
LB#
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
AO-17
WE
#
OE
#
UB
#
LB
#
CSO
#
I/O1-16
LB#
UB#
I/O1 - I/O32
Vcc
Vss
NC
BLOCK DIAGRAM
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
256k x 16 BIts
I/O24
I/O23
I/O22
I/O21
I/O20
I/O28
I/O27
I/O26
I/O25
NC
256k x 16 BIts
CS2
#
256k x 16 BIts
CS1
#
I/O17-32
256k x 16 BIts
CS3
#
3D PLUS,
641 rue Hélène Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0012
Rev : 2
January 2000
Page 1/3
PRELIMINARY
16Mbit CMOS SRAM
ELECTRONICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
Commercial
Operating Temperature
Industrial
T
A
-40 to 85
°C
H = HIGH
Symbol
V
IN
. V
OUT
V
cc
P
D
T
STG
T
A
Rating
-0.5 to +7.0
-0.5 to +7.0
2.0
-65 to 150
0 to 70
Unit
V
V
W
°C
°C
TRUTH TABLE
MODE
Not Selected
Not Selected
D
OUT
Disable
Read
Write
CS#
X
H
L
L
L
L = LOW
WE#
X
X
H
H
L
X = Don't Care
OE#
X
X
H
L
X
I/O Pin
High-Z
High-Z
High-Z
DOUT
DIN
Supply
Current
Standby
Standby
Active
Active
Active
3SD16-325
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent to the
device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
If OE is LOW during Write, tWHZ must be observed before data
is presented to the device.
DC OUTPUT CHARACTERISTICS
Symbol
V
OH
V
OL
Parameter
HIGH Voltage
LOW Voltage
Conditions
I
OH
= -4.0mA
I
OL
= 8.0mA
Min.
2.4
0.4
Max.
Unit
V
V
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
CC
Min
4.5
0
2.2
-0.5
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+0.5
0.8
Unit
V
V
V
V
NOTE: The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(T
A
= 25°C, f = 1.0MHZ)
Item
Input / Output Capacitance
Input / Capacitance
Symbol
C
I/O
C
IN
Test Conditions
V
I/O
= 0V
V
IN
= 0V
Min
-
-
Max
16
28
Unit
pF
pF
Symbol
T
RAC
T
WC
Parameter
Read Cycle Time
Write Cycle Time
Val.
15/20ns
15/20ns
*NOTE : Capacitance is sampled and not 100% tested.
DC AND OPERATING CHARACTERISTICS
(T
A
=0 to 70°C, V
CC
=5.0 ± 0.5V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Symbol
I
LI
I
LO
V
IN
= V
SS
to V
CC
CS# = V
IH
or OE# = V
IH
or WE# = V
IL
V
OUT
= V
SS
to V
CC
Operating Current
I
CC
Min. Cycle, 100% Duty
CS = V
IL
, V
IN
= V
IH
or V
IL
, I
OUT
= 0mA
15ns
20ns
Standby Current
I
SB
I
SB1
Min. Cycle, CS# = V
IH
f = 0MHZ, CS#
≥=
V
CC
-0.2V,
V
IN
≥V
CC
-0.2V or V
IN
≤
0.2V
Output Low Voltage Level
Output High Voltage Level
V
OL
V
OH
I
OL
= 8mA
I
OH
= -4mA
2.4
80
0.4
mA
V
V
540
mA
530
280
mA
Test Conditions
Min
-8
-8
Max
8
8
Unit
µA
µA
Note: The above parameters are also guaranteed at industrial temperature range.
3D PLUS,
641 rue Hélène Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0012
Rev : 2
January 2000
Page 2/3
PRELIMINARY
16Mbit CMOS SRAM
ELECTRONICS
MECHANICAL DRAWING
D
Dimensions (mm)
D
1
A
D
D
1
E
E
1
e Typ.
E
E
1
PQFP
e
e
1
Min
Max
3DS16-325
7.15
15.80
10.80
27.80
22.80
0.80
0.30
7.75
16.20
11.20
28.20
23.20
e
1
64 Places
A
ORDERING INFORMATION
Please contact 3D PLUS for more information about the available configurations.
3DS16-325SC-20 PQFP64
3DS16-325SI-20 PQFP64
3DS16-325SC-15 PQFP64
3DS16-325SI-15 PQFP64
3D
S
16
-
32
5
(S)
(C / I)
-
15
ACCESS TIME
-15 ns
-20 ns
C : Commercial temperature range ( 0°C to +70°C)
I : Industrial temperature range (- 40°C to +85°C)
PACKAGE
S : PQFP64
5.0V SUPPLY
32 bits WORD
16 Mbits
SRAM
3D PLUS
PRODUCT MARKING
- Trademark
- Part Number
- Date Code (ww,yy)
- Serial Number on request
3DS16-325S
5199
MAIN SALES OFFICE
France
3D PLUS
Tel : 33 (0)1 30 83 26 50
Fax : 33 (0)1 39 56 25 89
e-mail : sales@3d-plus.com
DISTRIBUTOR
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice.
C
3D PLUS, 1999
3D PLUS,
641 rue Hélène Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0012
Rev : 2
January 2000
Page 3/3
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