wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.
MAGX-001214-500L0S
Ordering Information
Part Number
MAGX-001214-500L00
MAGX-001214-500L0S
MAGX-001214-SB3PPR
Description
Flanged
Flangeless
1.2 - 1.4 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V2
Typical RF Performance under standard operating conditions, P
OUT
= 500 W (Peak)
Freq.
(MHz)
1200
1250
1300
1350
1400
P
IN
(W)
5.15
5.35
5.69
5.86
5.85
Gain
(dB)
19.86
19.69
19.43
19.31
19.22
I
D
(A)
17.7
16.7
17.2
17.9
18.1
Eff.
(%)
56.2
59.5
57.9
55.7
54.8
RL
(dB)
-12.7
-10.3
-10.9
-15.3
-17.5
Droop
(dB)
0.29
0.30
0.33
0.36
0.38
+1dB OD
(W)
568
561
554
547
549
Electrical Specifications: Freq. = 1200 - 1400 MHz, I
DQ
= 400 mA, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= 50 V; 300 µs / 10%
Input Power
Power Gain
Drain Efficiency
Pulse Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 375 W Peak (37.5 W avg.)
P
OUT
= 375 W Peak (37.5 W avg.)
P
OUT
= 375 W Peak (37.5 W avg.)
P
IN
G
P
η
D
Droop
VSWR-S
VSWR-T
-
17.5
50
-
-
-
6
19.2
56
0.4
3:1
5:1
8.9
-
-
0.7
-
-
Wpk
dB
%
dB
-
-
Extended Pulse Width Conditions: V
DD
= 42 V; 1.0 ms / 10%; (typical RF data)
Input Power
Power Gain
Drain Efficiency
P
IN
G
P
η
D
-
-
-
5.3
18.5
55
-
-
-
Wpk
dB
%
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics:
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 75 mA
V
DS
= 5 V, I
D
= 17.5 mA
I
DS
V
GS (TH)
G
M
-
-5
12.5
1.0
-3.1
19.2
30
-2
-
mA
V
S
Not applicable - Input matched
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
N/A
-
-
N/A
55
5.5
N/A
-
-
pF
pF
pF
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Absolute Maximum Ratings
1,2,3,4
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
DMAX
)
Input Power (P
IN
)
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation at 85 ºC
Thermal Resistance, (T
J
= 70 ºC)
V
DD
= 50 V, I
DQ
= 400 mA, Pout = 500 W, 300 µs Pulse / 10% Duty
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
1.
2.
3.
4.
Rev. V2
Limit
+65 V
-8 to -2 V
21.5 A
P
IN
(nominal) + 3 dB
200ºC
583 W
0.30 ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
1300 V
4000 V
Operation of this device above any one of these parameters may cause permanent damage.
Input Power Limit is +3 dB over nominal drive required to achieve P
OUT
= 500 W.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
Test Fixture Impedances
F (MHz)
1200
1250
1300
1350
1400
Z
IF
(Ω)
1.2 - j1.2
1.2 - j0.9
1.3 - j0.6
1.4 - j0.3
1.6 + j0.0
Z
OF
(Ω)
1.8 + j0.5
1.9 + j0.4
2.0 + j0.3
1.9 + j0.2
1.7 + j0.1
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
Zif
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Test Fixture Circuit Dimensions
Rev. V2
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
700
Rev. V2
600
500
P
OU T
(W)
1200 MHz
1300 MHz
1400 MHz
400
300
200
100
1
2
3
4
5
6
7
8
9
10
P
IN
(W)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
70
60
Drain E ff. (%)
1200 MHz
50
1300 MHz
1400 MHz
40
30
100
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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