wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.
MAGX-001214-500L0S
Ordering Information
Part Number
MAGX-001214-500L00
MAGX-001214-500L0S
MAGX-001214-SB3PPR
Description
Flanged
Flangeless
1.2 - 1.4 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V2
Typical RF Performance under standard operating conditions, P
OUT
= 500 W (Peak)
Freq.
(MHz)
1200
1250
1300
1350
1400
P
IN
(W)
5.15
5.35
5.69
5.86
5.85
Gain
(dB)
19.86
19.69
19.43
19.31
19.22
I
D
(A)
17.7
16.7
17.2
17.9
18.1
Eff.
(%)
56.2
59.5
57.9
55.7
54.8
RL
(dB)
-12.7
-10.3
-10.9
-15.3
-17.5
Droop
(dB)
0.29
0.30
0.33
0.36
0.38
+1dB OD
(W)
568
561
554
547
549
Electrical Specifications: Freq. = 1200 - 1400 MHz, I
DQ
= 400 mA, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= 50 V; 300 µs / 10%
Input Power
Power Gain
Drain Efficiency
Pulse Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 500 W Peak (50 W avg.)
P
OUT
= 375 W Peak (37.5 W avg.)
P
OUT
= 375 W Peak (37.5 W avg.)
P
OUT
= 375 W Peak (37.5 W avg.)
P
IN
G
P
η
D
Droop
VSWR-S
VSWR-T
-
17.5
50
-
-
-
6
19.2
56
0.4
3:1
5:1
8.9
-
-
0.7
-
-
Wpk
dB
%
dB
-
-
Extended Pulse Width Conditions: V
DD
= 42 V; 1.0 ms / 10%; (typical RF data)
Input Power
Power Gain
Drain Efficiency
P
IN
G
P
η
D
-
-
-
5.3
18.5
55
-
-
-
Wpk
dB
%
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics:
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 75 mA
V
DS
= 5 V, I
D
= 17.5 mA
I
DS
V
GS (TH)
G
M
-
-5
12.5
1.0
-3.1
19.2
30
-2
-
mA
V
S
Not applicable - Input matched
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
N/A
-
-
N/A
55
5.5
N/A
-
-
pF
pF
pF
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Absolute Maximum Ratings
1,2,3,4
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
DMAX
)
Input Power (P
IN
)
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation at 85 ºC
Thermal Resistance, (T
J
= 70 ºC)
V
DD
= 50 V, I
DQ
= 400 mA, Pout = 500 W, 300 µs Pulse / 10% Duty
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
1.
2.
3.
4.
Rev. V2
Limit
+65 V
-8 to -2 V
21.5 A
P
IN
(nominal) + 3 dB
200ºC
583 W
0.30 ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
1300 V
4000 V
Operation of this device above any one of these parameters may cause permanent damage.
Input Power Limit is +3 dB over nominal drive required to achieve P
OUT
= 500 W.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
Test Fixture Impedances
F (MHz)
1200
1250
1300
1350
1400
Z
IF
(Ω)
1.2 - j1.2
1.2 - j0.9
1.3 - j0.6
1.4 - j0.3
1.6 + j0.0
Z
OF
(Ω)
1.8 + j0.5
1.9 + j0.4
2.0 + j0.3
1.9 + j0.2
1.7 + j0.1
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
Zif
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Test Fixture Circuit Dimensions
Rev. V2
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
700
Rev. V2
600
500
P
OU T
(W)
1200 MHz
1300 MHz
1400 MHz
400
300
200
100
1
2
3
4
5
6
7
8
9
10
P
IN
(W)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
70
60
Drain E ff. (%)
1200 MHz
50
1300 MHz
1400 MHz
40
30
100
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
During the holidays, you may not go out in pairs, so here are some cold water: 1. Don't carry too much cash, put your valuables in your bag, and pay more attention to your bag when shopping. Whether i...
Abstract: A new vehicle-mounted shock absorption detection method based on digital signal processing is introduced. This method uses the acceleration signal detected by the automobile tire pressure mo...
[i=s]This post was last edited by littleshrimp on 2016-8-16 13:37[/i] [font=微软雅黑][size=4]I drew an ADS1263 evaluation board. It uses a 4-layer board (it can be changed to a 2-layer board in practice)....
Guided by the National Development and Reform Commission's Public Nutrition and Development Center, China Health Education Association, China Health Association Food Nutrition and Safety Professional ...
At present, the development of wireless power supply technology for electric vehicles (EVs) is becoming more and more active. In 2012, Volvo of Sweden established Volvo Technology Japan in Tokyo as...[Details]
This program is written to simulate the serial port hardware mechanism. When used, a timed interrupt can be set with a time interval of 1/4 baud rate. The receiving function is called once for ea...[Details]
1 Introduction
The high temperature tester is mainly used for temperature tracking measurement and data acquisition during the heating process. By systematically analyzing the test data, the...[Details]
Automotive applications are particularly sensitive to EMI events, which are unavoidable in a noisy electrical environment consisting of a central battery, bundled wiring harnesses, various inductiv...[Details]
All electronic design engineers and scientists have performed electrical signal analysis, or signal analysis for short. Through this basic measurement, they can gain insight into signal details and...[Details]
Due to the significant increase in electronic devices in automotive and industrial applications, the automotive and industrial markets continue to play an important role in China's electronics in...[Details]
In order to highlight the concept of "energy saving and environmental protection" of intelligent buildings, solar street lights are designed for intelligent communities. The inclination and capacit...[Details]
This paper designs a dot matrix LED text display screen that is easy to update, expandable, and low-cost. The way to reduce costs is
① Use the Bluetooth data transmission function of mobile ph...[Details]
DSP (digital signal processor) is used more and more frequently in today's engineering applications. There are three main reasons for this: first, it has powerful computing power and is capable of ...[Details]
Images in science fiction movies often break through the limits of reality, such as in the movie "Minority Report." Tom Cruise uses a multi-touch screen to browse information. Capacitive sensing te...[Details]
Although it is relatively easy to check the stability of a simple amplifier at lower frequencies, it may be much more difficult to evaluate the stability of a more complex circuit. This artic...[Details]
Editor's note: In order to help technicians or engineers who have knowledge of PIC microcontroller assembly language quickly master the method of using C language to program PIC microcontrollers, t...[Details]
1. Introduction
At present, most lighting equipment still uses traditional energy for lighting. Making full use of solar energy as the energy supply for lighting equipment is of great si...[Details]
Overview:
This paper introduces a method of connecting a CAN-bus network with Ethernet to form a medium-sized remote monitoring/data transmission network.
CAN (Controller Area Network) is ...[Details]
Xiaomi, a well-known Internet phone in mainland China, won a million-unit order contract from China Unicom on November 20 last year, which made Xiaomi famous in mainland China. In April this year...[Details]
Industrial Control Electronics
京公网安备 11010802033920号
EEWORLD
