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IRGS4B60KPBF

Description
IGBT 600V D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size361KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRGS4B60KPBF Overview

IGBT 600V D2PAK-3

IRGS4B60KPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLEAD FREE, PLASTIC, D2PAK-3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)89 ns
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)63 W
Certification statusNot Qualified
Maximum rise time (tr)23 ns
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)199 ns
Nominal on time (ton)40 ns
Base Number Matches1
PD - 95643A
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free.
C
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
V
CES
= 600V
I
C
= 6.8A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 2.1V
TO-220
IRGB4B60KPbF
D
2
Pak
TO-262
IRGS4B60KPbF IRGSL4B60KPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
12
6.8
Units
V
A
c
24
24
±20
63
31
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
V
W
Gate-to-Emitter Voltage
Maximum Power Dissipation
P
D
@ T
C
= 100°C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient
Weight
Junction-to-Ambient (PCB Mount, steady state)
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
2.4
–––
62
40
–––
Units
°C/W
d
g
www.irf.com
1
11/18/04

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Description IGBT 600V D2PAK-3 Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Is it Rohs certified? conform to conform to incompatible conform to incompatible
package instruction LEAD FREE, PLASTIC, D2PAK-3 LEAD FREE, PLASTIC PACKAGE-3 PLASTIC, D2PAK-3 LEAD FREE, PLASTIC, D2PAK-3 PLASTIC, D2PAK-3
Reach Compliance Code compliant compliant unknown compliant not_compliant
Maximum collector current (IC) 12 A 12 A 12 A 12 A 12 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V 600 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum landing time (tf) 89 ns 89 ns 89 ns 89 ns 89 ns
Gate emitter threshold voltage maximum 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3 e0 e3 e0
Humidity sensitivity level 1 1 1 1 1
Number of components 1 1 1 1 1
Number of terminals 2 3 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 225 260 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 63 W 63 W 63 W 63 W 63 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rise time (tr) 23 ns 23 ns 23 ns 23 ns 23 ns
surface mount YES NO YES YES YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb) Matte Tin (Sn) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 40 30 30 30
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal off time (toff) 199 ns 199 ns 199 ns 199 ns 199 ns
Nominal on time (ton) 40 ns 40 ns 40 ns 40 ns 40 ns
Shell connection COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
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