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IPP037N08N3GE8181XKSA1

Description
MOSFET N-CH 80V 100A TO220-3
Categorysemiconductor    Discrete semiconductor   
File Size498KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPP037N08N3GE8181XKSA1 Overview

MOSFET N-CH 80V 100A TO220-3

IPP037N08N3GE8181XKSA1 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)80V
Current - Continuous Drain (Id) at 25°C100A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)6V,10V
Rds On (maximum value) when different Id, Vgs3.75 milliohms @ 100A, 10V
Vgs (th) (maximum value) when different Id3.5V @ 155µA
Gate charge (Qg) at different Vgs (maximum value)117nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)8110pF @ 40V
FET function-
Power dissipation (maximum)214W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingPG-TO-220-3
Package/casingTO-220-3
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
OptiMOS
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Type
IPP037N08N3 G
IPI037N08N3 G
Product Summary
V
DS
R
DS(on),max
I
D
80
3.5
100
V
mΩ
A
IPB035N08N3 G
Package
Marking
PG-TO220-3
037N08N
PG-TO262-3
037N08N
PG-TO263-3
035N08N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
100
100
400
510
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=100 A,
R
GS
=25
mJ
V
W
°C
T
C
=25 °C
214
-55 ... 175
55/175/56
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev. 2.4
page 1
2010-06-23

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