IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
OptiMOS
™
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Type
IPP037N08N3 G
IPI037N08N3 G
Product Summary
V
DS
R
DS(on),max
I
D
80
3.5
100
V
mΩ
A
IPB035N08N3 G
Package
Marking
PG-TO220-3
037N08N
PG-TO262-3
037N08N
PG-TO263-3
035N08N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
100
100
400
510
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=100 A,
R
GS
=25
Ω
mJ
V
W
°C
T
C
=25 °C
214
-55 ... 175
55/175/56
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev. 2.4
page 1
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
4)
-
-
-
-
-
-
0.7
62
40
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=155 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=100 A
V
GS
=6 V,
I
D
=50 A
Drain-source on-state resistance
(SMD)
Gate resistance
Transconductance
R
DS(on)
V
GS
=10 V,
I
D
=100 A
V
GS
=6 V,
I
D
=50 A
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=100 A
80
2
-
-
2.8
0.1
-
3.5
1
µA
V
-
-
-
-
-
-
-
75
10
1
3.1
3.9
2.8
3.6
1.9
149
100
100
3.75
6.3
3.5
6.0
-
-
Ω
S
nA
mΩ
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Rev. 2.4
page 2
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
6100
1640
59
23
79
45
14
8110
2180
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=40 V,
V
GS
=0 V
V
DD
=40 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
30
18
31
88
5.0
119
-
-
-
117
-
158
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
R
=40 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
1.0
73
136
100
400
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
250
120
200
100
80
150
P
tot
[W]
I
D
[A]
100
50
0
0
50
100
150
200
60
40
20
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0
1 µs
10 µs
0.5
10
2
100 µs
0.2
1 ms
Z
thJC
[K/W]
I
D
[A]
10
-1
0.1
10 ms
0.05
0.02
0.01
single pulse
10
1
DC
10
0
10
-1
10
0
10
1
10
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.4
page 4
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
400
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
4.5 V
5V
5.5 V
350
7V
8
6V
300
200
5.5 V
R
DS(on)
[m
Ω
]
250
6
I
D
[A]
6V
150
4
7V
10 V
100
5V
2
50
4.5 V
0
0
1
2
3
4
5
0
0
50
100
150
200
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
300
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
200
250
150
200
150
g
fs
[S]
175 °C
25 °C
I
D
[A]
100
100
50
50
0
0
2
4
6
8
0
0
50
100
150
V
GS
[V]
I
D
[A]
Rev. 2.4
page 5
2010-06-23
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