PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 725 – 770 MHz
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs
designed for cellular power amplifier applications in the 725 to 770
MHz band. Features include input matching and thermally-enhanced
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA070601E
Package H-36265-2
PTFA070601F
Package H-37265-2
2-Carrier WCDMA Performance
V
DD
= 28 V, I
DQ
= 600 m A, ƒ = 760 MHz, 3GPP WCDMA
s ignal, P/A R = 8 dB, 10 MHz carrier spacing
-25
-30
55
50
Features
•
•
Broadband internal matching
Typical WCDMA performance, 760 MHz, 28 V
- Average output power = 12 W
- Gain = 19 dB
- Efficiency = 29%
Typical CW performance, 760 MHz, 28 V
- Output power at P–1dB = 60 W
- Gain = 19 dB
- Efficiency = 72%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 60 W
(CW) output power
Pb-free and RoHS-compliant
IM3 (dBc), ACPR (dBc)
45
-35
-40
-45
-50
-55
29
31
33
Efficiency
IM3
40
35
30
25
20
15
Drain Efficiency (%)
•
•
•
•
•
ACPR
35
37
39
41
43
45
47
10
5
Output Power, avg. (dBm )
RF Characteristics
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 12 W AVG, ƒ = 760 MHz
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
—
—
—
Typ
–37
19
29
Max
—
—
—
Unit
dBc
dB
%
η
D
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 60 W PEP, ƒ = 760 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18
46.5
—
Typ
19.5
48
–31
Max
—
—
–29
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.15
2.3
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
V
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 600 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 60 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
219
1.25
–40 to +150
0.8
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA070601E
PTFA070601F
V4
V4
Package Outline
H-36265-2
H-37265-2
Package Description
Thermally-enhanced,
slotted flange, single-ended
Thermally-enhanced,
earless flange, single-ended
Shipping
Tray
Tray
Marking
PTFA070601E
PTFA070601F
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 600 mA, ƒ = 760 MHz
T
CASE
= -10°C
22
21
20
Broadband Performance
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 45 dBm
T
CASE
= 25°C
Gain
T
CASE
= 80°C
75
50
-4
Gain (dB), Efficiency (%)
65
45
40
35
-8
-10
55
45
19
18
17
16
15
36
38
40
42
44
46
48
50
35
Return Loss
30
25
20
15
710
-12
-14
Efficiency
25
15
Gain
-16
-18
-20
770
720
730
740
750
760
Output Power (dBm)
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, ƒ = 760 MHz, tone spacing = 1 MHz
Broadband Performance
(at P–1dB)
V
DD
= 28 V, I
DQ
= 600 mA
-20
Intermodulation Distortion (dBc)
Gain (dB), Efficiency (%)
65
51
-25
-30
-35
-40
-45
-50
-55
-60
-65
29
31
33
I
DQ
= 700 mA
I
DQ
= 600 mA
60
50
45
40
35
30
25
20
15
710
49
Output Power
Gain
48
47
46
770
I
DQ
= 450 mA
35
37
39
41
43
45
47
720
730
740
750
760
Output Power, Avg. (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 01, 2009-04-16
Output Power (dBm)
55
Efficiency
50
Input Return Loss (dB)
Efficiency
-6
Drain Efficiency (%)
Gain (dB)
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Output Power
(P–1dB)
vs. Drain Voltage
I
DQ
= 600 mA, ƒ = 760 MHz
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 600 mA,
ƒ = 760 MHz, tone spacing = 1 MHz
-15
49.5
Intermodulation Distortion (dBc)
-25
-35
-45
-55
-65
-75
28
30
IM3
Efficiency
50
49
Drain Efficiency (%)
40
30
Output Power (dBm)
48.5
48
47.5
47
46.5
22
24
26
28
30
32
34
IM5
20
IM7
10
0
32
34
36
38
40
42
44
46
Output Power, Avg. (dBm)
Drain Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.8 A
2.4 A
6.0 A
12.0 A
1.00
0.99
0.98
0.97
0.96
-20
18.0 A
24.0 A
32.0 A
Normalized Bias Voltage (V)
1.02
1.01
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
R
--
D
Z Source
Z Load
-
W
AV
E
LE
NGTH
S T
OW
A
RD
G
E
NE
RA
T
O
G
S
Z Load
800 MHz
0
.0
0.1
D-
T
OW
ARD
LOA
GTHS
EL
EN
700 MHz
Frequency
MHz
700
720
740
760
800
R
Z Source
Ω
jX
–4.82
–4.40
–3.91
–3.40
–2.39
5.32
5.07
4.84
4.69
4.55
Z Load
Ω
R
3.14
3.01
2.88
2.79
2.69
jX
0.61
1.02
1.44
1.90
2.82
Z Source
800 MHz
700 MHz
0.1
WA
<---
V
0.
2
See next page for circuit information
Data Sheet
5 of 10
Rev. 01, 2009-04-16
0.2
0.2
0. 1
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